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Buhrman led his field in developing methods to reorient nanoscale magnets (electrons) to make magnetic memories faster and more efficient. His innovations enabled spin-transfer-torque magnetic random-access memory, now in production at leading semiconductor foundries. His work was the first to demonstrate magnetic switching in a multilayer device driven by spin-transfer torque, and he also discovered a giant spin Hall effect in heavy metals, which can enable even more efficient magnetic switching.
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Rakshit Jain,Arnab Bose, Anthony Richardella,Timothy Pillsbury, Yongxi Ou,Nitin Samarth,Robert Buhrman, Daniel Ralph
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