Ramūnas Aleksiejūnas

Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave 9, Bld. 3, Vilnius 2040, Lithuania

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Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

J. Mickevičius, K. Nomeika, M. Dmukauskas,A. Kadys,S. Nargelas,R. Aleksiejūnas

Vacuum, pp.109871, (2020)

Bibtex

Extreme radiation resistance in InN

Žydrūnas Podlipskas,Jonas Jurkevičius,Arūnas Kadys, Marek Kolenda, Vitalij Kovalevskij,Darius Dobrovolskas,Ramūnas Aleksiejūnas,Gintautas Tamulaitis

Journal of Alloys and Compounds, (2019): 48-55

Bibtex

Spectral dependence of THz emission from InN and InGaN layers

Ričardas Norkus,Ramūnas Aleksiejūnas,Arūnas Kadys, Marek Kolenda,Gintautas Tamulaitis,Arūnas Krotkus

Scientific reports, no. 1 (2019): 7077

WOSBibtex

Direct Auger recombination and density-dependent hole diffusion in InN

Ramūnas Aleksiejūnas, Žydrūnas Podlipskas,Saulius Nargelas,Arūnas Kadys, Marek Kolenda, Kazimieras Nomeika, Jūras Mickevičius,Gintautas Tamulaitis

Scientific reports, no. 1 (2018): 4621

Cited by1WOSBibtex

Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

J. Mickevičius,D. Dobrovolskas,R. Aleksiejūnas, K. Nomeika,Tomas Grinys,A. Kadys,G. Tamulaitis

Journal of Crystal Growth, (2017): 173-177

Cited by5Bibtex

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

K. Nomeika,R. Aleksiejūnas,S. Miasojedovas,R. Tomašiūnas,Kęstutis Jarašiūnas,Ines Pietzonka,Martin Strassburg,H.-J. Lugauer

Journal of Luminescence, (2017): 301-306

Cited by2Bibtex

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Žydrūnas Podlipskas,R. Aleksiejūnas,A. Kadys,J. Mickevičius,J. Jurkevičius,G. Tamulaitis,M. S. Shur,M. Shatalov, Jinwei Yang,R. Gaska

Journal of Physics D, no. 14 (2016): 145110

Bibtex

Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers

Žydrūnas Podlipskas,R. Aleksiejūnas,Saulius Nargelas,J. Jurkevičius,J. Mickevičius,A. Kadys,G. Tamulaitis,M. S. Shur,Max Shatalov,Jinwei Yang,Remis Gaska

Current Applied Physics, no. 6 (2016): 633-637

Bibtex

Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

K Nomeika, M Dmukauskas,R Aleksiejūnas,Patrik Scajev,S Miasojedovas,Arunas Kadys,Saulius Nargelas,K Jarasiūnas

LITHUANIAN JOURNAL OF PHYSICS, no. 4 (2015): 255-263

Bibtex

Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content

T Saxena,M S Shur,Saulius Nargelas, ž Podlipskas,R Aleksiejūnas,G Tamulaitis,Max Shatalov,Jinwei Yang,R Gaska

Optics express, no. 15 (2015)

Cited by4WOSBibtex

Carrier dynamics in blue and green emitting InGaN MQWs

R Aleksiejūnas, K Nomeika,S Miasojedovas,Saulius Nargelas,T Malinauskas,K Jarasiūnas, O Tuna,M Heuken

Physica Status Solidi B-basic Solid State Physics, (2015)

Cited by1Bibtex

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

J Mickevicius, ž Podlipskas,R Aleksiejūnas,A Kadys,J Jurkevicius,G Tamulaitis,M S Shur,Maxim Shatalov, Jeongsam Yang,R Gaska

Journal of Electronic Materials, no. 12 (2015)

Cited by3Bibtex

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

R Aleksiejūnas, K Gelžinytė,Saulius Nargelas,K Jarasiūnas,Mikas Vengris,Eric A Armour, D Byrnes,Ronald A Arif,S M Lee,George D Papasouliotis

Applied Physics Letters, (2014)

Cited by20Bibtex

Photoluminescence features and carrier dynamics in InGaN heterostructures with wide staircase interlayers and differently shaped quantum wells

Arunas Kadys,T Malinauskas, M Dmukauskas, I Reklaitis, K Nomeika,V Gudelis,R Aleksiejūnas,Patrik Scajev,Saulius Nargelas,S Miasojedovas,K Jarasiūnas

LITHUANIAN JOURNAL OF PHYSICS, no. 3 (2014): 187-198

Cited by1Bibtex

Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors: From Bulk GaN to (In,Ga)N Quantum Wells

R Aleksiejunas,Patrik Scajev,Saulius Nargelas,T Malinauskas,A Kadys,K Jarasiūnas

JAPANESE JOURNAL OF APPLIED PHYSICS, no. SP8 (2013)

Cited by2Bibtex

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

K Jarasiūnas,Saulius Nargelas,R Aleksiejūnas,S Miasojedovas,Mikas Vengris, S Okur,H Morkoc,U Ozgur,Ch Giesen, O Tuna,M Heuken

Journal of Applied Physics, (2013)

Cited by10Bibtex

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

T Malinauskas,A Kadys,Tomas Grinys,Saulius Nargelas,R Aleksiejūnas,S Miasojedovas,J Mickevicius,R Tomasiūnas,K Jarasiūnas,Mikas Vengris, S Okur,Vitaliy Avrutin

(2012)

Cited by8Bibtex

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

K Jarasiūnas,Patrik Scajev,Saulius Nargelas,R Aleksiejūnas,J H Leach,T Paskova, S Okur, U Ozgur, H Morkoc

(2012)

Cited by6Bibtex

Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds

K Jarasiūnas,R Aleksiejūnas,T Malinauskas,Saulius Nargelas,Patrik Scajev

(2012)

Cited by1Bibtex

Study of excess carrier dynamics in polar, semi‐polar, and non‐polar (In,Ga)N epilayers and QWs

R Aleksiejūnas, L Lubys,Mikas Vengris,K Jarasiūnas,Tim Wernicke, Volker Hoffmann,Carsten Netzel,A Knauer,Markus Weyers,M Kneissl

Physica Status Solidi (c), (2011)

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Ramūnas AleksiejūnasBinding

Papers40 papers

Ramūnas Aleksiejūnas