R. Thomas Weitz

Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany

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Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor

I Vladimirov, M Kühn,T Geßner,F May,R T Weitz

Scientific reports, no. 1 (2018): 14868

Cited by3WOSBibtex

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

Ute Zschieschang,Konstantin Yu Amsharov,Martin Jansen,Klaus Kern,Hagen Klauk,R Thomas Weitz

Organic Electronics, (2015): 340-344

Cited by12Bibtex

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

Mahdieh Aghamohammadi,Reinhold Rodel,Ute Zschieschang,Carmen Ocal,Hans Boschker,R Thomas Weitz,Esther Barrena,Hagen Klauk

no. 41 (2015): 22775-22785

Cited by35Bibtex

Electrical Characteristics of Field‐Effect Transistors based on Chemically Synthesized Graphene Nanoribbons

Ute Zschieschang,Hagen Klauk,Imke B Mueller,Andrew James Strudwick, Tobias Hintermann,Matthias Georg Schwab,Akimitsu Narita,Xinliang Feng,Klaus Muellen,R Thomas Weitz

ADVANCED ELECTRONIC MATERIALS, no. 3 (2015)

Cited by2Bibtex

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Isabella Gierz,Takayuki Suzuki,R. Thomas Weitz,Dong Su Lee,Benjamin Krauss,Christian Riedl,Ulrich Starke,Hartmut Höchst,Jurgen H. Smet,Christian R. Ast,Klaus Kern

Physical Review B, no. 23 (2010)

Cited by179Bibtex

One-dimensional heterostructures of single-walled carbon nanotubes and CdSe nanowires

Nan Fu,Zhen Li,Anton Myalitsin,Matteo Scolari,R Thomas Weitz,Marko Burghard,Alf Mews

Small (Weinheim an der Bergstrasse, Germany), no. 3 (2010): 376-380

Cited by15WOSBibtex

Coulomb-driven broken-symmetry states in doubly gated suspended bilayer graphene

R. Thomas Weitz,Monica T. Allen,Benjamin E. Feldman,Jens Martin,Amir Yacoby

(2010)

Cited by1Bibtex

Local compressibility measurements of correlated states in suspended bilayer graphene

J Martin,B E Feldman,R T Weitz,M T Allen,A Yacoby

Physical review letters, no. 25 (2010): 256806-256806

Cited by164WOSBibtex

Bias stress effect in low-voltage organic thin-film transistors

Ute Zschieschang,R. Thomas Weitz,Klaus Kern,Hagen Klauk

Applied Physics A-materials Science & Processing, no. 1 (2009): 139-145

Cited by91Bibtex

Fabry-Pérot resonances in one-dimensional plasmonic nanostructures

Jens Dorfmüller,Ralf Vogelgesang,R Thomas Weitz,Carsten Rockstuhl,Christoph Etrich,Thomas Pertsch,Falk Lederer,Klaus Kern

Nano letters, no. 6 (2009): 2372-2377

Cited by254WOSBibtex

Low-voltage organic n-channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative

Ute Zschieschang,Konstantin Amsharov,R. Thomas Weitz,Martin Jansen,Hagen Klauk

Synthetic Metals, no. 21 (2009): 2362-2364

Cited by8EIBibtex

DNA-templated synthesis of ZnO thin layers and nanowires

Petia Atanasova,R Thomas Weitz,Peter Gerstel,Vesna Srot,Peter Kopold,Peter A van Aken,Marko Burghard,Joachim Bill

Nanotechnology, no. 36 (2009): 365302-365302

Cited by14WOSBibtex

Plasmonic nanostructures in aperture-less scanning near-field optical microscopy (aSNOM)

Ralf Vogelgesang,Jens Dorfmüller,Ruben Esteban,R. Thomas Weitz,Alexandre Dmitriev,Klaus Kern

Physica Status Solidi B-basic Solid State Physics, no. 10 (2008): 2255-2260

Cited by161Bibtex

Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets

Gómez-Navarro Cristina,Weitz R Thomas,Bittner Alexander M,Scolari Matteo,Mews Alf,Burghard Marko,Kern Klaus

Nano Letters, no. 11 (2007): 3499-3503

Cited by2068WOSBibtex

Single-walled carbon nanotube transistors on an ultra-thin gate dielectric

R. Thomas Weitz,Ute Zschieschang,Hagen Klauk,Marko Burghard,Klaus Kern

Physica Status Solidi B-basic Solid State Physics, no. 13 (2006): 3394-3398

Cited by3Bibtex

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R. Thomas WeitzBinding

Papers15 papers

R. Thomas Weitz