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The scientific activity of Susanna Reggiani has been devoted to the physics, modeling and characterization of electron devices, with special emphasis on transport models in semiconductors. She contributed to the development of physical models in the frame of a deterministic solution of the Boltzmann transport equation based on the expansion of the distribution function in spherical harmonics leading to accurate descriptions of carrier mobility, impact-ionization and hot-electron injection into the gate oxide.
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 99 (2024): 1-5
IEEE Transactions on Electron Devicesno. 9 (2023): 4953-4957
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IRPSpp.1-6, (2023)
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Luigi Balestra,Leonardo Cirioni,Andrea Cavallini,Susanna Reggiani,Mattia Rossetti, Michele Gallo, Simone Guarnera,Riccardo Depetro
SOLID-STATE ELECTRONICS (2023): 108728-108728
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2022 IEEE International Reliability Physics Symposium (IRPS)pp.6C.2-1-6C.2-6, (2022)
JOURNAL OF APPLIED PHYSICSno. 21 (2022)
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