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NAND circuits,flash memories,Hall effect,backpropagation,calibration,copper,electrodes,integrated memory circuits,ionic conductivity,low-power electronics,mixed conductivity,multilayer perceptrons,phase change memories,random-access storage,semiconductor device models,three-dimensional integrated circuits,vacancies (crystal),field effect transistors,MOSFET,current density,integrated circuit design,semiconductor doping,silicon,silicon-on-insulator,CMOS integrated circuits
NAND circuits,flash memories,Hall effect,backpropagation,calibration,copper,electrodes,integrated memory circuits,ionic conductivity,low-power electronics,mixed conductivity,multilayer perceptrons,phase change memories,random-access storage,semiconductor device models,three-dimensional integrated circuits,vacancies (crystal),field effect transistors,MOSFET,current density,integrated circuit design,semiconductor doping,silicon,silicon-on-insulator,CMOS integrated circuits
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论文共 49 篇作者统计合作学者相似作者
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Ali Khakifirooz,Eduardo Anaya,Sriram Balasubrahrmanyam, Geoff Bennett,Daniel Castro, John Egler,Kuangchan Fan,Rifat Ferdous,Kartik Ganapathi, Omar Guzman,Chang Wan Ha,Rezaul Haque,
ISSCCpp.27-29, (2023)
Ali Khakifirooz,Eduardo Anaya,Sriram Balasubrahmanyam, Geoff Bennett,Daniel Castro, John Egler,Kuangchan Fan,Rifat Ferdous,Kartik Ganapathi, Omar Guzman,Chang Wan Ha,Rezaul Haque,
IEEE Solid-State Circuits Letters (2023): 161-164
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RESISTIVE SWITCHING: FROM FUNDAMENTALS OF NANOIONIC REDOX PROCESSES TO MEMRISTIVE DEVICE APPLICATIONS (2016)
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 11 (2015): 3498-3507
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