Ronald A. Arif

Center for Optical Technologies|Department of Electrical and Computer Engineering|Lehigh University

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Papers54 papers

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Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

Jing Lu, Jie Su,Ronald A. Arif, George D. Papasouliotis, Ajit Paranjpe

MRS Advances, no. 05 (2017): 329-334

Cited by2Bibtex

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

Jie Su,Niels Posthuma, Dirk Wellekens, Yoga Saripalli,Stefaan Decoutere,Ronald A. Arif,George D. Papasouliotis

Journal of Electronic Materials, no. 12 (2016): 6346-6354

Bibtex

Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

Jie Su,Eric A. Armour, Soo Min Lee,Ronald A. Arif, George D. Papasouliotis

Physica Status Solidi (a), no. 4 (2016): 856-860

Bibtex

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

Nicholas Lacroce,Guangyu Liu,Cheekeong Tan,Ronald A Arif, Soo Min Lee,Nelson Tansu

(2015)

Cited by1Bibtex

STAGGERED COMPOSITION QUANTUM WELL METHOD AND DEVICE

Nelson Tansu,Ronald A Arif,Yik Khoon Ee,Hongping Zhao

(2014)

Cited by5Bibtex

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

R Aleksiejūnas, K Gelžinytė,Saulius Nargelas,K Jarasiūnas,Mikas Vengris,Eric A Armour, D Byrnes,Ronald A Arif,S M Lee,George D Papasouliotis

Applied Physics Letters, (2014)

Cited by20Bibtex

NITRIDE BASED QUANTUM WELL LIGHT-EMITTING DEVICES HAVING IMPROVED CURRENT INJECTION EFFICIENCY

Nelson Tansu,Hongping Zhao,Guangyu Liu,Ronald A Arif

(2011)

Cited by4Bibtex

Efficient light extraction method and device

Nelson Tansu,Yik Khoon Ee, James F Gilchrist, Pisit Kumnorkaew,Ronald A Arif

(2011)

Cited by15Bibtex

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao,Guangyu Liu,Ronald A. Arif,Nelson Tansu

Solid State Electronics, no. 10 (2010): 1119-1124

Cited by191EIBibtex

GALLIUM NITRIDE-BASED DEVICE AND METHOD

Nelson Tansu,Ronald A Arif,Yik Khoon Ee

(2009)

Cited by18Bibtex

Observation of Anti-Stokes Fluorescence from GaN Film Grown on Si (111) Substrate

S Tripathy,Guibao Xu,Xiaodong Mu,Yujie J Ding,Muhammad Jamil,Ronald A Arif,Nelson Tansu,Jacob B Khurgin

(2009)

Bibtex

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

Yik-Khoon Ee,Ronald A. Arif,Hua Tong,Hongping Zhao,James F. Gilchrist,Nelson Tansu,Nelson Tansu

IEEE Journal of Selected Topics in Quantum Electronics, no. 4 (2009): 1218-1225

Cited by128EIWOSBibtex

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

Hongping Zhao,Ronald A. Arif,Nelson Tansu

Selected Topics in Quantum Electronics, IEEE Journal of, no. 4 (2009): 1104-1114

Cited by130EIWOSBibtex

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Hongping Zhao,Ronald A. Arif,Yik-Khoon Ee,Nelson Tansu

IEEE Journal of Quantum Electronics, no. 1 (2009): 66-78

Cited by179EIWOSBibtex

Staggered InGaN quantum well diode lasers emitting at 500 nm

Hongping Zhao,Ronald A Arif,Nelson Tansu

(2009)

Cited by1Bibtex

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures

Yik-Khoon Ee,Pisist Kumnorkaew,Ronald A Arif,Hua Tong,James F Gilchrist,Nelson Tansu

Optics express, no. 16 (2009): 13747-13757

Cited by135WOSBibtex

Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures

Yikkhoon Ee,Pisist Kumnorkaew,Hua Tong,Ronald A Arif,James F Gilchrist,Nelson Tansu

(2009)

Cited by6Bibtex

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu,Xiaohang Li,Ronald A Arif, G S Huang,Yikkhoon Ee,Nelson Tansu

(2009)

Cited by1Bibtex

Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy

Yik-Khoon Ee,Hongping Zhao,Ronald A. Arif,Muhammad Jamil,Nelson Tansu

Journal of Crystal Growth, no. 7 (2008): 2320-2325

Cited by43EIBibtex

Type-II InGaN-GaNAs quantum wells for lasers applications

Ronald A Arif,Hongping Zhao,Nelson Tansu

Applied Physics Letters, (2008)

Cited by112Bibtex

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Ronald A. ArifBinding

Papers54 papers

Ronald A. Arif