S. BhagdikarDepartment of Electrical Engineering Indian Institute of Technology Bombay关注立即认领分享关注立即认领分享基本信息浏览量:0职业迁徙个人简介暂无内容研究兴趣论文共 3 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN ExperimentsSharang Bhagdikar,Souvik Mahapatra2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2020)引用0浏览0EIWOS引用00A Stochastic Hole Trapping-Detrapping Framework for NBTI, TDDS and RTNSharang Bhagdikar,Souvik Mahapatra2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2019)引用6浏览0EIWOS引用60A Stochastic Modeling Framework For Nbti And Tdds In Small Area P-MosfetsR Anandkrishnan,S. Bhagdikar,N. Choudhury,R. Rao, B. Fernandez,A. Chaudhury,N. Parihar,S. Mahapatra2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)(2018)引用7浏览0EIWOS引用70作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn