Sam Kyu Noh

Korea Research Institute of Standards and Science P.O. Box 3, Taedok Science Town, Taejon 305–606, Korea

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Papers26 papers

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Study on defects and confined energy level of InAs/GaAs quantum dot system

J.S. Kim,E.K. Kim, S.J. Lee,S.K. Noh

Physica B: Physics of Condensed Matter, (2006): 877-880

Cited by4EIBibtex

Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers

S.J. Lee,S.K. Noh,S.C. Hong, J.I. Lee

Current Applied Physics, no. 1 (2006): 37-40

Cited by4EIBibtex

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

J.I. Lee,H.D. Nam,W.J. Choi,B.Y. Yu, J.D. Song, S.C. Hong,S.K. Noh,A. Chovet

Current Applied Physics, no. 6 (2006): 1024-1029

Cited by10EIBibtex

Determination of heavy-hole masses from zeeman splittings of excitons in GaAs quantum wells

Kyu-Seok Lee, Chae-Deok Lee,S. K. Noh

Journal of the Korean Physical Society, no. 6 (2005): 1410-1413

Bibtex

Microstructural and optical properties dependent on the strain in double-stacked InAs/GaAs quantum dots

M.D. Kim,S.K. Noh,C.S. Kim,T.W. Kim,S.G. Kim,T.G. Kim

Journal of Crystal Growth, no. 3 (2005): 279-285

Cited by9EIBibtex

Energy levels of InAs/InP quantum dots by thermal treatment

Eunkyeom Kim, Juhan Kim, Kyu-Young Park,Euijoon Yoon,S. K. Noh

Journal of the Korean Physical Society, (2005)

Bibtex

Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height

S.J. Lee,J.O. Kim,S.K. Noh,J.W. Choe,K.-S. Lee

Journal of Crystal Growth, no. 1 (2005): 39-46

Cited by7EIBibtex

Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells

Chang-Myung Lee,Suk-Ho Choi,Chang-Soo Kim,S. K. Noh,Joo In Lee, K. Y. Lim,Il Ki Han

Journal of the Korean Physical Society, no. 2 (2004)

Bibtex

Discrepancy between photoluminescence and photoresponse intensities in n-InAs/GaAs and InAs/n-GaAs quantum-dot heterostructures

S.J. Lee,S.K. Noh,K.-S. Lee,J.W. Choe

Solid State Communications, no. 2 (2004): 115-118

Cited by4EIBibtex

Evolution of bimodal size-distribution on InAs coverage variation in as-grown InAs/GaAs quantum-dot heterostructures

S.J Lee,S.K Noh, J.W Choe, E.K Kim

Journal of Crystal Growth, no. 3 (2004): 405-411

Cited by13EIBibtex

Structural and optical characterizations of InxGa1-xN/GaN (0.15 ≤ x ≤ 0.30) multi-quantum well structures

Chang-Soo Kim,Sang-Jun Lee,Sam-Kyu Noh,Kyuhan Lee,Sunwoon Kim,Kwang-Jae Lee, Yong-Dae Choi

Journal of the Korean Physical Society, (2004)

Bibtex

Structural characterization of InGaN/GaN multi-quantum well structures using high-resolution XRD

Young Hoon Kim,Chang-Soo Kim,S. K. Noh, S. I. Ban, Sung-Gu Kim, K. Y. Lim,Byungsung O

Journal of the Korean Physical Society, (2003)

Bibtex

The energy level spacing between the ground and first excited states in InAs/GaAs quantum dots as a measure of the zero dimensionality

U.H. Lee,Y.D. Jang,H. Lee,D. Lee,J.S. Kim,J.Y. Leem,S.K. Noh

Physica E: Low-dimensional Systems and Nanostructures, (2003): 129-130

Cited by10EIBibtex

Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties

Jong Su Kim, D.Y. Lee, In-Ho Bae,J.I. Lee,S. K. Noh,Jin-Soo Kim, Gu Hyun Kim, S. I. Ban,Se-Kyung Kang, Seonpil Kim,Jae-Young Leem,Minhyon Jeon

Journal of the Korean Physical Society, (2001)

Bibtex

Precise control of emission wavelength from InAs quantum dots adopting a thin AlAs layer

Jin-Soo Kim,P. W. Yu,S. K. Noh,J.I. Lee,Jong Su Kim, S. M. Kin,Se-Kyung Kang,Jae-Young Leem,Minhyon Jeon

Journal of the Korean Physical Society, (2001)

Bibtex

Properties of Mg doped GaAs grown by molecular beam epitaxy

Jong Su Kim,I.H. Bae,J.Y. Leem,S.K. Noh,J.I. Lee,J.S. Kim,S.M. Kim,J.S. Son,Minhyon Jeon

Journal of Crystal Growth, no. 1 (2001): 52-56

Cited by17EIBibtex

Molecular beam epitaxial growth and properties of high-quality ZnSxSe1 − x on GaAs(0 0 1) substrate

Jae Yoon Leem,C.R. Lee,C.S. Kim,Yang Koo Cho,Sam Kyu Noh, Jun Seong Son,D.K. Lee,I.H. Bae

Journal of Crystal Growth, no. 1 (1997): 40-46

EIBibtex

Quasibound states induced by AlAs monolayers in InxGa1−xAs/GaAs quantum wells

C.D. Lee,S.K. Noh,Kyu-Seok Lee

Superlattices and Microstructures, no. 1 (1997): 101-106

Cited by1EIBibtex

Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C.D. Lee, B.K. Kim,J.W. Kim,H.L. Park, C.H. Chung,S.K. Chang,J.I. Lee,S.K. Noh

Journal of Crystal Growth, no. 1 (1994): 136-139

Cited by20EIBibtex

Anomalous magnetotransport in narrow quantum hall conductors

S.K. Noh, J.I. Lee,G. Ihm,J.H. Oh, K.J. Chang, S.J. Lee

Superlattices and Microstructures, no. 2 (1994): 187-187

Cited by1EIBibtex

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