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Snehasis Tripathy

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Cardiff University

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Expertise in: - Soil Mechanics - Geotechnical engineering - Saturated & unsaturated soils - Advanced Experimental Geotechnical Engineering and Interpretation - Climate Change Adaptation Technologies - Nuclear waste disposal - Compacted expansive soil behaviour Architectural, Civil & Environmental Engineering

Papers123 papers

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Strain-Induced Bimetallic Nanoparticles-TiO2 Nanohybrids for Harvesting Light Energy

P. Bamola, C. Dwivedi, A. Gautam,M. Sharma,S. Tripathy, A. Mishra, H. Sharma

Applied Surface Science, (2020): 145416

Bibtex

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

T. Partida-Manzanera, Z. H. Zaidi, J. W. Roberts,S. B. Dolmanan,K. B. Lee,P. A. Houston,P. R. Chalker,S. Tripathy,R. J. Potter

Journal of Applied Physics, no. 3 (2019): 034102

Bibtex

Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

Hareesh Chandrasekar,Sandeep Kumar, Kolla Lakshmi Ganapathi, Shreesha Prabhu,Surani Bin Dolmanan,S. Tripathy,Srinivasan Raghavan,K. N. Bhat, S. Mohan, Rangarajan Muralidharan,Navakanta Bhat,Digbijoy N. Nath

IEEE Transactions on Electron Devices, no. 9 (2018): 3711-3718

EIWOSBibtex

Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures

Hongfei Liu,Yunjiang Jin,Ming Lin,Shifeng Guo,Anna Marie Yong,Surani Bin Dolmanan,S. Tripathy, Xizu Wang

Journal of Materials Chemistry C, no. 47 (2018): 13059-13068

Bibtex

Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer

Goutam Kumar Dalapati, S. Guhathakurata, Avishek Das,C. Mahata,Sandipan Chakraborty,S. Bhunia,Hwee Leng Seng,S. Chattopadhyay,Lakshmi Kanta Bera,S. Tripathy

Journal of Alloys and Compounds, (2018): 994-1002

Bibtex

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

Sandeep Kumar, Anamika Singh Pratiyush,Surani Bin Dolmanan,S. Tripathy, Rangarajan Muralidharan,Digbijoy N. Nath

Applied Physics Letters, no. 25 (2017): 251103

Cited by1Bibtex

Direct Patterning of Zinc Sulfide on a Sub-10 Nanometer Scale via Electron Beam Lithography

Mohammad S. M. Saifullah,Mohamed Asbahi, Maryam Binti-Kamran Kiyani,S. Tripathy, Esther A. H. Ong, Asadullah Ibn Saifullah,Hui Ru Tan, Tanmay Dutta,Ramakrishnan Ganesan,Suresh Valiyaveettil, Karen Siew-Ling Chong

ACS Nano, no. 10 (2017): 9920-9929

Cited by3Bibtex

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Adarsh Nigam,Thirumaleshwara N. Bhat,Saravanan Rajamani,Surani Bin Dolmanan,S. Tripathy,Mahesh Kumar

AIP ADVANCES, no. 8 (2017): 085015

Cited by4Bibtex

Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

Sandeep Kumar, Nayana Remesh,Surani Bin Dolmanan,S. Tripathy,Srinivasan Raghavan, Rangarajan Muralidharan,Digbijoy N. Nath

Solid-state Electronics, (2017): 117-122

Cited by1Bibtex

Direct observation of thickness and foreign interlayer driven abrupt structural transformation in ultrathin carbon and hybrid silicon nitride/carbon films

Neeraj Dwivedi,Reuben J. Yeo,Zheng Zhang,Chetna Dhand,S. Tripathy, Charanjit S. Bhatia

Carbon, (2017): 701-719

Cited by8Bibtex

Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device

Goutam Kumar Dalapati,Vignesh Suresh,Sandipan Chakraborty,Chandreswar Mahata, Yi Ren, Thirumaleshawara Bhat,S. Tripathy,Taeyoon Lee,Lakshmi Kanta Bera,D. Z. Chi

Advanced Materials Letters, no. 7 (2016): 517-524

Bibtex

High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD

H. F. Liu, Y.J. Jin, Chengguo Li,S. B. Dolmanan,Shifeng Guo,S. Tripathy,C. C. Tan

RSC Advances, no. 58 (2016): 52575-52582

Bibtex

Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

S. Arulkumaran,Kumud Ranjan,Geok Ing Ng,J. Kennedy,Peter P. Murmu, T. N. Bhat,S. Tripathy

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processin..., no. 4 (2016): 042203

Bibtex

Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Wai Hoe Tham,D. S. Ang,Lakshmi Kanta Bera,Surani Bin Dolmanan, Thirumaleshwara N. Bhat,Rasanayagam S. Kajen,Hui Ru Tan,Siew Lang Teo,S. Tripathy

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processin..., no. 4 (2016): 041217

Bibtex

Annealing Pressure and Ambient Dependent RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

Yi Liu, Mei Ying Lai,T. N. Bhat,Hui Ru Tan,Poh Chong Lim,S. Tripathy,Eng Fong Chor

ECS Journal of Solid State Science and Technology, no. 2 (2016)

Bibtex

Interface Engineering and Controlling the Friction and Wear of Ultrathin Carbon Films: High sp3 Versus High sp2 Carbons

Neeraj Dwivedi,Reuben J. Yeo,Zheng Zhang,Chetna Dhand,S. Tripathy, Charanjit S. Bhatia

ADVANCED FUNCTIONAL MATERIALS, no. 10 (2016): 1526-1542

Bibtex

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si

Y Liu,S P Singh, L M Kyaw, M K Bera, Y J Ngoo,H R Tan,S Tripathy,G Q Lo,E F Chor

(2015)

Cited by13Bibtex

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Subramaniam Arulkumaran,G I Ng, C M Manoj Kumar,K Ranjan,K L Teo, O F Shoron,Sreeraman Rajan,S Bin Dolmanan,S C Tripathy

Applied Physics Letters, (2015)

Cited by5Bibtex

Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105, 232113 (2014)]

H F Liu,S B Dolmanan,T N Bhat,S C Tripathy

Applied Physics Letters, (2015)

Cited by3Bibtex

Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

Reuben J Yeo,Neeraj Dwivedi, Lu Zhang,Zheng Zhang,Christina Y H Lim,S Tripathy,C S Bhatia

Journal of Applied Physics, (2015)

Cited by8Bibtex

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