Shoji Ishibashi - AI Profile

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Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan

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Papers248 papers

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Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3

S. Ishibashi,A. Uedono

Acta Physica Polonica A, no. 2 (2020): 231-234

Bibtex

Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO

Shigefusa F. Chichibu,Akira Uedono,Kazunobu Kojima,Kazuto Koike,Mitsuaki Yano,Shun-ichi Gonda,Shoji Ishibashi

Journal of Applied Physics, no. 21 (2020): 215704

Bibtex

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski,Michal Bockowski,Jun Suda,Shoji Ishibashi,Shigefusa F Chichibu,Tetsu Kachi

Scientific reports, no. 1 (2020): 17349

WOSBibtex

Metaelectric multiphase transitions in a highly polarizable molecular crystal

Sachio Horiuchi,Shoji Ishibashi,Rie Haruki,Reiji Kumai, Satoshi Inada,Shigenobu Aoyagi

CHEMICAL SCIENCE, no. 24 (2020): 6183-6192

WOSBibtex

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Akira Uedono,Kanako Shojiki, Kenjiro Uesugi,Shigefusa F. Chichibu,Shoji Ishibashi, Marcel Dickmann,Werner Egger,Christoph Hugenschmidt,Hideto Miyake

Journal of Applied Physics, no. 8 (2020): 085704

Bibtex

Hydrogen-Bonded Small-Molecular Crystals Yielding Strong Ferroelectric and Antiferroelectric Polarizations

Horiuchi Sachio,Ishibashi Shoji

Journal of the Physical Society of Japan, no. 5 (2020): 051009

Bibtex

Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

A. Uedono,W. Egger, T. Koschine,C. Hugenschmidt, M. Dickmann,S. Ishibashi

Acta Physica Polonica A, no. 2 (2020): 227-230

Bibtex

Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Shoji Ishibashi,Akira Uedono,Hiori Kino,Takashi Miyake,Kiyoyuki Terakura

JOURNAL OF PHYSICS-CONDENSED MATTER, no. 47 (2019): 475401

WOSBibtex

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Akira Uedono, Hiroko Iguchi, Tetsuo Narita,Keita Kataoka,Werner Egger, Tönjes Koschine,Christoph Hugenschmidt, Marcel Dickmann,Kohei Shima,Kazunobu Kojima,Shigefusa F. Chichibu,Shoji Ishibashi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, no. 10 (2019): 1900104

Bibtex

Single-component molecular conductor [Pt(dmdt) 2 ]-a three-dimensional ambient-pressure molecular Dirac electron system

Biao Zhou,Shoji Ishibashi, Tatsuru Ishii, Takahiko Sekine, Ryosuke Takehara,Kazuya Miyagawa,Kazushi Kanoda,Eiji Nishibori,Akiko Kobayashi

CHEMICAL COMMUNICATIONS, no. 23 (2019): 3327-3330

WOSBibtex

First-principles studies of spin-orbital physics in pyrochlore oxides

Hiroshi Shinaoka,Yukitoshi Motome,Takashi Miyake,Shoji Ishibashi,Philipp Werner

JOURNAL OF PHYSICS-CONDENSED MATTER, no. 32.0 (2019): 323001

WOSBibtex

Coexistence of normal and inverse deuterium isotope effects in a phase-transition sequence of organic ferroelectrics

Sachio Horiuchi,Shoji Ishibashi,Kensuke Kobayashi,Reiji Kumai

RSC ADVANCES, no. 68 (2019): 39662-39673

Bibtex

Hydrogen-Bonded Architectures and Field-Induced Polarization Switching in Bridged Bis(benzimidazole) Crystals

Sachio Horiuchi,Shoji Ishibashi, Satoshi Inada,Shigenobu Aoyagi

CRYSTAL GROWTH & DESIGN, no. 1 (2019): 328-335

Bibtex

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

Shigefusa F. Chichibu,Shigefusa F. Chichibu,Shigefusa F. Chichibu,Kohei Shima,Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo,Hiroko Iguchi, Tetsuo Narita,Keita Kataoka,Shoji Ishibashi

JAPANESE JOURNAL OF APPLIED PHYSICS, (2019)

Bibtex

Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al 2 O 3 /GaN -

Akira Uedono, Werner Egger,Christoph Hugenschmidt,Shoji Ishibashi

international conference on indium phosphide and related materials, (2019)

Bibtex

Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

Akira Uedono, Alexandra-Madalina Siladie,Julien Pernot,Bruno Daudin,Shoji Ishibashi

Journal of Applied Physics, no. 17 (2019): 175705

Bibtex

Piezoelectricity of strongly polarized ferroelectrics in prototropic organic crystals

Sachio Horiuchi,Jun’ya Tsutsumi,Kensuke Kobayashi,Reiji Kumai,Shoji Ishibashi

JOURNAL OF MATERIALS CHEMISTRY C, no. 17 (2018): 4714.0-4719.0

Cited by2Bibtex

Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam

Kazuto Koike,Mitsuaki Yano,S. Gonda,Akira Uedono,Shoji Ishibashi,Kazunobu Kojima,Shigefusa F. Chichibu

Journal of Applied Physics, no. 16 (2018): 161562

Bibtex

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Shigefusa F. Chichibu,Shigefusa F. Chichibu,Kohei Shima,Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno,Shoji Ishibashi,Akira Uedono

Applied Physics Letters, no. 21 (2018): 211901

Cited by1Bibtex

The origin and properties of SRH-type nonradiative recombination centers in ZnO

Shigefusa Chichibu,Kazunobu Kojima,Kazuto Koike,Mitsuaki Yano, Shun-ichi Gonda,Shoji Ishibashi,Akira Uedono

The Japan Society of Applied Physics, (2018)

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