Shoji Ishibashi

Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan

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Papers241 papers

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Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Akira Uedono,Kanako Shojiki, Kenjiro Uesugi,Shigefusa F. Chichibu,Shoji Ishibashi, Marcel Dickmann,Werner Egger,Christoph Hugenschmidt,Hideto Miyake

Journal of Applied Physics, no. 8 (2020): 085704

Bibtex

Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO

Shigefusa F. Chichibu,Akira Uedono,Kazunobu Kojima,Kazuto Koike,Mitsuaki Yano,Shun-ichi Gonda,Shoji Ishibashi

Journal of Applied Physics, no. 21 (2020): 215704

Bibtex

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski,Michal Bockowski,Jun Suda,Shoji Ishibashi,Shigefusa F Chichibu,Tetsu Kachi

Scientific reports, no. 1 (2020): 17349

WOSBibtex

Metaelectric multiphase transitions in a highly polarizable molecular crystal

Sachio Horiuchi,Shoji Ishibashi,Rie Haruki,Reiji Kumai, Satoshi Inada,Shigenobu Aoyagi

Chemical science, no. 24 (2020): 6183-6192

WOSBibtex

Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3

S. Ishibashi,A. Uedono

Acta Physica Polonica A, no. 2 (2020): 231-234

Bibtex

Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

A. Uedono,W. Egger, T. Koschine,C. Hugenschmidt, M. Dickmann,S. Ishibashi

Acta Physica Polonica A, no. 2 (2020): 227-230

Bibtex

Hydrogen-Bonded Small-Molecular Crystals Yielding Strong Ferroelectric and Antiferroelectric Polarizations

Horiuchi Sachio,Ishibashi Shoji

Journal of the Physical Society of Japan, no. 5 (2020): 051009

Bibtex

Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

Akira Uedono, Alexandra-Madalina Siladie,Julien Pernot,Bruno Daudin,Shoji Ishibashi

Journal of Applied Physics, no. 17 (2019): 175705

Bibtex

Hydrogen-Bonded Architectures and Field-Induced Polarization Switching in Bridged Bis(benzimidazole) Crystals

Sachio Horiuchi,Shoji Ishibashi, Satoshi Inada,Shigenobu Aoyagi

Crystal Growth & Design, no. 1 (2019): 328-335

Bibtex

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

Shigefusa F. Chichibu,Shigefusa F. Chichibu,Shigefusa F. Chichibu,Kohei Shima,Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo,Hiroko Iguchi, Tetsuo Narita,Keita Kataoka,Shoji Ishibashi

Japanese Journal of Applied Physics, (2019)

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Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Akira Uedono, Hiroko Iguchi, Tetsuo Narita,Keita Kataoka,Werner Egger, Tönjes Koschine,Christoph Hugenschmidt, Marcel Dickmann,Kohei Shima,Kazunobu Kojima,Shigefusa F. Chichibu,Shoji Ishibashi

Physica Status Solidi B-basic Solid State Physics, pp.1900104, (2019)

Bibtex

Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Shoji Ishibashi,Akira Uedono,Hiori Kino,Takashi Miyake,Kiyoyuki Terakura

Journal of physics. Condensed matter : an Institute of Physics journal, no. 47 (2019): 475401

WOSBibtex

Single-component molecular conductor [Pt(dmdt) 2 ]-a three-dimensional ambient-pressure molecular Dirac electron system

Biao Zhou,Shoji Ishibashi, Tatsuru Ishii, Takahiko Sekine, Ryosuke Takehara,Kazuya Miyagawa,Kazushi Kanoda,Eiji Nishibori,Akiko Kobayashi

Chemical communications (Cambridge, England), no. 23 (2019): 3327-3330

WOSBibtex

Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al 2 O 3 /GaN -

Akira Uedono, Werner Egger,Christoph Hugenschmidt,Shoji Ishibashi

international conference on indium phosphide and related materials, (2019)

Bibtex

First-principles studies of spin-orbital physics in pyrochlore oxides

Hiroshi Shinaoka,Yukitoshi Motome,Takashi Miyake,Shoji Ishibashi,Philipp Werner

Journal of physics. Condensed matter : an Institute of Physics journal, no. 32 (2019): 323001

WOSBibtex

Coexistence of normal and inverse deuterium isotope effects in a phase-transition sequence of organic ferroelectrics

Sachio Horiuchi,Shoji Ishibashi,Kensuke Kobayashi,Reiji Kumai

no. 68 (2019): 39662-39673

Bibtex

Strong polarization switching with low-energy loss in hydrogen-bonded organic antiferroelectrics

S Horiuchi,R Kumai,S Ishibashi

Chemical science, no. 2 (2018): 425-432

Cited by3WOSBibtex

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Shigefusa F. Chichibu,Shigefusa F. Chichibu,Kohei Shima,Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno,Shoji Ishibashi,Akira Uedono

Applied Physics Letters, no. 21 (2018): 211901

Cited by1Bibtex

Computational findings of metastable ferroelectric phases of squaric acid

Shoji Ishibashi,Sachio Horiuchi,Reiji Kumai

Physical Review B, no. 18 (2018)

Bibtex

Field-induced antipolar-polar structural transformation and giant electrostriction in organic crystal

Kensuke Kobayashi,Sachio Horiuchi,Shoji Ishibashi,Youichi Murakami,Reiji Kumai

Journal of the American Chemical Society, (2018)

Cited by2WOSBibtex

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Shoji IshibashiBinding

Papers241 papers

Shoji Ishibashi