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Shyh-Chiang Shen received his Ph.D. degree in electrical engineering at the University of Illinois at Urbana-Champaign (UIUC) in 2001. He was a key contributor of high-cycle low-voltage radio-frequency (RF) microelectromechanical system (MEMS) switches and GaAs metal-semiconductor field effect transistors (MESFETs) millimeter-wave integrated circuits (MMICs) during his tenure at UIUC. At Xindium Technologies (2000-2004), he developed a proprietary commercial-grade InP single-heterojunction bipolar transistor (SHBT) technology that led to the first demonstration of monolithically integrated 40Gb/s PIN+TIA differential-output optical receivers.
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论文共 150 篇作者统计合作学者相似作者
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Matteo Meneghini, Geok Ing Ng,Farid Medjdoub,Matteo Buffolo, Shireen Warnock,Digbijoy Nath,Jun Suda,Junxia Shi,Shyh-Chiang Shen
IEEE Transactions on Electron Devicesno. 3 (2024): 1340-1343
APPLIED PHYSICS LETTERSno. 12 (2023)
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Minkyu Cho,Zhiyu Xu,Marzieh Bakhtiary-Noodeh,Theeradetch Detchprohm, Matthias A. Daeumer, Jae-Hyuck Yoo,Qinghui Shao,Ted A. Laurence,Daryl Key,Tadao Hashimoto,Edward Letts,Russell D. Dupuis,
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 9 (2023): 4578-4583
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APPLIED PHYSICS LETTERSno. 12 (2023)
IEEE Journal of Quantum Electronicsno. 3 (2023): 1-8
Gallium Nitride Materials and Devices XVII (2022)
Gallium Nitride Materials and Devices XVII (2022)
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