基本信息
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个人简介
Stefan Flachowsky was born in Dresden, Germany, in 1981. He received the Diploma degree in electrical engineering in 2005 from the University of Applied Sciences Dresden, Dresden, where he is currently working toward the Ph.D. degree.
His research interests include characterization and numerical device modeling of strained Si CMOS transistors.
Mr. Flachowsky is a member of the American Vacuum Society and of the German Association for Electrical, Electronic and Information Technologies.
研究兴趣
论文共 95 篇作者统计合作学者相似作者
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Martin Trentzsch,Stefan Flachowsky,R. Richter,J. Paul, B. Reimer,D. Utess,S. Jansen, Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,Johannes Ocker,M. Noack,Johannes Müller,Patrick Polakowski, J. Schreiter,S. Beyer,Thomas Mikolajick,B. Rice
U. Schroeder,M. Pesic,T. Schenk, H. Mulaosmanovic,S. Slesazeck,J. Ocker,C. Richter,E. Yurchuk,K. Khullar, J. Mueller,P. Polakowski,E. D. Grimley,J. M. LeBeau,S. Flachowsky,S. Jansen,S. Kolodinski,R. van Bentum,A. Kersch, C. Kuenneth,T. Mikolajick
J. Mueller,P. Polakowski, S. Mueller, H. Mulaosmanovic,J. Ocker,T. Mikolajick,S. Slesazeck,S. Flachowsky,M. Trentzsch
mag(2015)
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作者统计
#Papers: 95
#Citation: 2887
H-Index: 25
G-Index: 42
Sociability: 5
Diversity: 1
Activity: 0
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