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His current research areas include CMOS device technology with emphasis on trigate and Tunneling FET, flash memory technology, resistance memory technology,embedded memory technology, reliability characterization and modeling. He has published more than 300 journal and conference papers, one textbook, and holds more than 40 patents. Since 1995, he has personally presented more than 35 times in the world leading IEEE conferences, IEDM and VLSI, with focus on the reliability and technology of advanced-CMOS, flash memory, resistance memory etc. In particular, he is the first (from Taiwan) to present the paper at VLSI Technology symposium in 1995. Three highest impact inventions (with both paper publishing and patents) by his team includes: (1) IFCP(Incremental Frequency Charge Pumping)[1], a milestone for the CMOS reliability analysis beyond the 90nm generation. This method can replace the conventional CV method (which has been used for 50 years) in measuring the interface/oxide traps with small dimensions and with gate oxide thickness in the tunneling regime. (2) A unique Ig-RTN transient measurement on the understanding of FET breakdown based on the characterization of traps in the gate dielectric. A third breakdown was discovered [2], different from the well known soft-breakdown and hard-breakdown. This led to the invention of an OTP structure [3] with vast economic benefit. (3) A new invention of one-transistor nonvolatile memory [4] which will be able to replace conventional Floating Gate since its inception in 1967, as floating gate reaches its scaling limit at around 20nm. These are cornerstones for a sustainable semiconductor industry when the Silicon technology scaling is continuing.
He is an IEEE Fellow, IEEE EDS BoG(Board Governor) member (2014-2016), EDS AdCom member (2004-2009), IEEE Distinguished Lecturer, EDS Regions/Chapters Vice-Chair/Chair, and Editor of J-EDS (2014-), Editor of EDL(2002-2008). He has served on the committees of premiere conferences, e.g., VLSI Technology, IEDM, IRPS, etc. Also, he has been the Technical Program Chair of 2004 and 2015 IPFA, the Technical Program Vice-Chair of SSDM (the largest conference in semiconductor areas in Japan). ED Taipei chapter was awarded the 2002 EDS Chapter of the Year Award under his leadership as the chapter chair. This is a remarkable achievement and milestone to the IEEE societies in Taiwan since the chapter is the first one to receive this honor among those 26 IEEE Taipei chapters at that time. He was awarded 3 times outstanding Research Award for excellence in research, as well as the top-PI in 2003, and the current distinguished NSC Research Fellow, from the National Science Council. He was also granted Distinguished EE Professor and Engineering Professor by the Engineering Societies of Taiwan.
He is an IEEE Fellow, IEEE EDS BoG(Board Governor) member (2014-2016), EDS AdCom member (2004-2009), IEEE Distinguished Lecturer, EDS Regions/Chapters Vice-Chair/Chair, and Editor of J-EDS (2014-), Editor of EDL(2002-2008). He has served on the committees of premiere conferences, e.g., VLSI Technology, IEDM, IRPS, etc. Also, he has been the Technical Program Chair of 2004 and 2015 IPFA, the Technical Program Vice-Chair of SSDM (the largest conference in semiconductor areas in Japan). ED Taipei chapter was awarded the 2002 EDS Chapter of the Year Award under his leadership as the chapter chair. This is a remarkable achievement and milestone to the IEEE societies in Taiwan since the chapter is the first one to receive this honor among those 26 IEEE Taipei chapters at that time. He was awarded 3 times outstanding Research Award for excellence in research, as well as the top-PI in 2003, and the current distinguished NSC Research Fellow, from the National Science Council. He was also granted Distinguished EE Professor and Engineering Professor by the Engineering Societies of Taiwan.
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Applied Physics Ano. 2 (2023): 1-15
IRPSpp.1-7, (2023)
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VLSI Technology and Circuitspp.1-2, (2023)
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2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DATpp.1-2, (2023)
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2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-7, (2023)
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2023 Silicon Nanoelectronics Workshop (SNW)pp.115-116, (2023)
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L. C. Lin,E R. Hsieh, T. C. Kao,M. Y. Lee, J. K. Chang, J. C. Guo,S. S. Chung,T. P. Chen, S. A. Huang, T. J. Chen,O. Cheng
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)pp.1-2, (2022)
2022 IEEE Silicon Nanoelectronics Workshop (SNW)pp.1-2, (2022)
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.15-17, (2022)
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