Sudhiranjan Tripathy

Institute of Materials Research and Engineering, A-Star, Singapore(Institute of Materials Research and Engineering,Inst. of Mat. Res. and Engineering),Singapore City,Singapore

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Papers53 papers

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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Adarsh Nigam, Neeraj Goel,Thirumaleshwara N Bhat, Md. Tawabur Rahman,Surani Bin Dolmanan,Qiquan Qiao,Sudhiranjan Tripathy,Mahesh Kumar

Sensors and Actuators B-chemical, (2020): 127832

Bibtex

Fabrication and Modeling based Performance Analysis of Circular GaN MOSHEMT based Electrochemical Sensors

Arathy Varghese, Chinnamuthan Periasamy,Lava Bhargava,Surani Bin Dolmanan,Sudhiranjan Tripathy

IEEE Sensors Journal, pp.1-1, (2020)

Bibtex

MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection

Adarsh Nigam,Thirumaleshwara N. Bhat, Vijendra Singh Bhati,Surani Bin Dolmanan,Sudhiranjan Tripathy,Mahesh Kumar

IEEE Sensors Journal, no. 8 (2019): 2863-2870

EIWOSBibtex

Slippery and Wear Resistant Surfaces Enabled by Interface Engineered Graphene

Neeraj Dwivedi, Tarak K Patra, Jae-Bok Lee,Reuben J Yeo,Srilok Srinivasan, Tanmay Dutta,Kiran Sasikumar,Chetna Dhand,Sudhiranjan Tripathy,Mohammad S M Saifullah,Aaron J Danner, Sar Hashmi

Nano letters, (2019)

WOSBibtex

Sensitive and Selective Detection of Pb2+ ions using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor

Adarsh Nigam, Vijendra Singh Bhati,Thirumaleshwara N Bhat,Surani Bin Dolmanan,Sudhiranjan Tripathy,Mahesh Kumar

IEEE Electron Device Letters, pp.1-1, (2019)

Bibtex

Sensitive and Selective Detection of Pb 2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor

Adarsh Nigam, Vijendra Singh Bhati,Thirumaleshwara N. Bhat,Surani Bin Dolmanan,Sudhiranjan Tripathy,Mahesh Kumar

IEEE Electron Device Letters, no. 12 (2019): 1976-1979

EIWOSBibtex

Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis

Arathy Varghese, Chinnamuthan Periasamy,Lava Bhargava,Surani Bin Dolmanan,Sudhiranjan Tripathy

IEEE Sensors Letters, no. 4 (2019): 1-4

EIWOSBibtex

Investigation of Ta₂O₅ as an Alternative High-

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Dielectric for InAlN/GaN MOS-HEMT on Si

Sandeep Kumar,Himanshu Kumar, Sandeep Vura, Anamika Singh Pratiyush, Vanjari Sai Charan,Surani B. Dolmanan,Sudhiranjan Tripathy, Rangarajan Muralidharan,Digbijoy N. Nath

IEEE Transactions on Electron Devices, no. 3 (2019): 1230-1235

EIWOSBibtex

Boosting contact sliding and wear protection via atomic intermixing and tailoring of nanoscale interfaces

Neeraj Dwivedi,Reuben J Yeo,Chetna Dhand, Jared Risan, Richard Nay,Sudhiranjan Tripathy, Sukumar Rajauria,Mohammad S M Saifullah,Subramanian K R S Sankaranarayanan,Hyunsoo Yang,Aaron Danner,Charanjit S Bhatia

Science advances, no. 1 (2019)

Cited by2WOSBibtex

Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion

Neeraj Dwivedi,Reuben J Yeo, Leonard J K Yak,Nalam Satyanarayana,Chetna Dhand,Thirumaleshwara N Bhat,Zheng Zhang,Sudhiranjan Tripathy, Charanjit S Bhatia

ACS applied materials & interfaces, no. 27 (2016): 17606-21

Cited by8WOSBibtex

Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

W H Tham,D S Ang,L K Bera,S B Dolmanan,Thirumaleshwara N Bhat,Vivian K X Lin,Sudhiranjan Tripathy

IEEE Transactions on Electron Devices, (2016)

Cited by8Bibtex

Influence of PECVD deposited SiN x passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

Sarab Preet Singh, Yi Liu, Y J Ngoo, L M Kyaw, M K Bera,S B Dolmanan,Sudhiranjan Tripathy,E F Chor

Journal of Physics D, (2015)

Cited by4Bibtex

Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

L M Kyaw,L K Bera,Thirumaleshwara N Bhat, Yi Liu,Hui Ru Tan,S B Dolmanan,E F Chor,Sudhiranjan Tripathy

Journal of Vacuum Science & Technology B, (2015)

Bibtex

Sputter grown sub-micrometer thick Cu 2 ZnSnS 4 thin film for photovoltaic device application

G K Dalapati,Sudip K Batabyal,Saeid Masudypanah, Zhenghua Su,Ajay Kushwaha,Ten It Wong,H F Liu, T N Bhat, Aneesa Iskander,Yeefun Lim,Lydia Helena Wong,Sudhiranjan Tripathy

Materials Letters, (2015): 45-50

Cited by20Bibtex

Crystallization of Sputter-Deposited Amorphous (FeSi 2 ) 1– x Al x Thin Films

H K Hui,Sudhiranjan Tripathy, Dongzhi Chi, Cheng Cheh Tan, G K Dalapati, H R Tan, M Bosman

Crystal Growth & Design, (2015)

Bibtex

Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

Subramaniam Arulkumaran,Geok Ng,Kumud Ranjan, Chandra Kumar, Siew Foo,Kian Ang,S Vicknesh,S B Dolmanan,Thirumaleshwara N Bhat,Sudhiranjan Tripathy

JAPANESE JOURNAL OF APPLIED PHYSICS, no. SP4 (2015)

Cited by7Bibtex

SEMICONDUCTOR DEVICE FABRICATION

L K Bera,S B Dolmanan, M Kumar, R S Kajen,Sudhiranjan Tripathy

(2015)

Bibtex

Thermally robust RuO x Schottky diodes and HEMTs on III-nitrides: Thermally robust RuO x Schottky diodes and HEMTs on III-nitrides

L M Kyaw, Aju Abraham Saju, Yi Liu, M K Bera,Sarab Preet Singh,Sudhiranjan Tripathy, E F Chor

Physica Status Solidi (c), (2014)

Bibtex

Thermally robust RuOx Schottky diodes and HEMTs on III‐nitrides

L M Kyaw, Aju Abraham Saju, Yi Liu, M K Bera,Sarab Preet Singh,Sudhiranjan Tripathy,E F Chor

Physica Status Solidi (c), (2014)

Cited by4Bibtex

Structural and optical properties of Al x Ga 1−x N/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates

Thirumaleshwara N Bhat,S B Dolmanan, Y Dikme,Hui Ru Tan,L K Bera,Sudhiranjan Tripathy

Journal of Vacuum Science & Technology B, (2014)

Bibtex

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Sudhiranjan TripathyBinding

Papers53 papers

Sudhiranjan Tripathy