Sukkoo Jung

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Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes

Kyuhyun Bang, Kyuhyun Bang,Sukkoo Jung,Kwang Hyeon Baik,Jae Min Myoung

Current Applied Physics, no. 6 (2017): 842-846

Cited by1Bibtex

Reduced efficiency droop of nonpolar a-plane (11-20) GaN-based light-emitting diodes by vertical injection geometry

Min Joo Park,Seung Kyu Oh,Tak Jeong,Sukkoo Jung,Joon Seop Kwak

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processin..., no. 4 (2016)

Bibtex

NON-POLAR SUBSTRATE HAVING HETERO-STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND NITRIDE-BASED LIGHT EMITTING DEVICE USING THE SAME

Sukkoo Jung, Younghak Chang, Hyunggu Kim, Kyuhyun Bang

(2013)

Bibtex

Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

Kwang Hyeon Baik, Hyonwoong Kim,Jihyun Kim,Sukkoo Jung,Soohwan Jang

Applied Physics Letters, (2013)

Cited by18Bibtex

Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

Moontaek Hong,Taesoo Kim,Kinam Park,Sukkoo Jung, Younghak Chang, Gyuhyun Bang, Hyunggu Kim, Jina Jeon,Yoonho Choi,Sungmin Hwang,Junghoon Song

Journal of Applied Physics, (2013)

Cited by1Bibtex

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Fan Yang,Chunfeng Zhang,Chentian Shi,Min Joo Park,Joon Seop Kwak,Sukkoo Jung,Yoonho Choi, Xuewei Wu,Xiaoyong Wang,Min Xiao

Applied Physics Letters, no. 12 (2013): 123506

Cited by5Bibtex

High brightness nonpolar a-plane (11–20) GaN light-emitting diodes

Sukkoo Jung, Younghak Chang,Kyuhyun Bang, Hyunggu Kim,Yoonho Choi,Sungmin Hwang,Kwang Hyeon Baik

Semiconductor Science and Technology, (2012)

Cited by18Bibtex

NON-POLAR NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

Sukkoo Jung, Younghak Chang, Hyunggu Kim, Kyuhyun Bang

(2012)

Cited by2Bibtex

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

A Y Polyakov,Leewoon Jang,N B Smirnov,A V Govorkov,E A Kozhukhova,T G Yugova, V Y Reznik,S J Pearton,Kwang Hyeon Baik,Sungmin Hwang,Sukkoo Jung,Inhwan Lee

Journal of Applied Physics, (2011)

Cited by9Bibtex

Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate

Sungmin Hwang,Yong Gon Seo,Kwang Hyeon Baik,Insung Cho,Jong Hyeob Baek,Sukkoo Jung,Tae Geun Kim,Meoungwhan Cho

Applied Physics Letters, (2009)

Cited by60Bibtex

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Sukkoo JungBinding

Papers10 papers

Sukkoo Jung