Sung-Min Hwang

Green Energy Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816, Republic of Korea

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Papers69 papers

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Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In-Hwan Lee,A. Y. Polyakov,Sung-Min Hwang,N. M. Shmidt,E. I. Shabunina, N. A. Tal'nishnih,N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin,S. J. Pearton

Applied Physics Letters, no. 6 (2017): 062103

Cited by4Bibtex

Electron irradiation of near-UV GaN/InGaN light emitting diodes

In-Hwan Lee,A. Y. Polyakov,N. B. Smirnov, I. V. Shchemerov, N. M. Shmidt, N. A. Tal'nishnih, E. I. Shabunina,Han-Su Cho,Sung-Min Hwang, R. A. Zinovyev, Sergey Didenko, P. B. Lagov

Physica Status Solidi (a), no. 10 (2017): 1700372

Cited by1Bibtex

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In-Hwan Lee,A. Y. Polyakov,N. B. Smirnov, R. A. Zinovyev,Kang-Bin Bae, Tae-Hoon Chung,Sung-Min Hwang,Jong-Hyeob Baek,S. J. Pearton

Applied Physics Letters, no. 19 (2017): 192107

Cited by5Bibtex

L attice distortion an alysis of nonpol ar a-pl ane $(11\b ar 20)$ G aN films by using a gr azing-incidence X-r ay diffr action technique

Yong Gon Seo, Jihoon Kim,Sung-Min Hwang,Jihyun Kim,Soohwan Jang, Heesan Kim,Kwang Hyeon Baik

Journal of the Korean Physical Society, no. 4 (2015): 607-611

Bibtex

Lattice distortion analysis of nonpolar a-plane (11\bar 20) GaN films by using a grazing-incidence X-ray diffraction technique

Yong Gon Seo,Jihoon Kim,Sungmin Hwang,Soohwan Jang, Heesan Kim,Kwang Hyeon Baik

Journal of the Korean Physical Society, (2015)

Bibtex

High hole concentration Mg doped a-plane GaN with MgN by metal–organic chemical vapor deposition

Keunman Song,Jongmin Kim, Jehyuk Choi,Daehun Kang, Kahee Kim,Sungmin Hwang,Bongkyun Kang,Daeho Yoon

Materials Letters, (2015)

Cited by1Bibtex

Inhibition of Action Potentials in Rat Trigeminal Ganglion Intracellular Acidification Is Associated with Changes in Free Cytosolic Calcium and

Stephen J Korn,Ardem Patapoutian,Ajay Dhaka,Valerie Uzzell,Adrienne E Dubin,Jayanti Mathur,Matt J Petrus,Michael Bandell, D K Johnson, J Biol,Joongsoo Kim,Kyungpyo Park

(2015)

Bibtex

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

Ji Hoon Kim,Sungmin Hwang,Kwang Hyeon Baik,Jung Ho Park

(2014)

Bibtex

Effects of Nano- and Microscale SiO

Jisu Son, Cao Miao,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano,Yong Gon Seo,Sungmin Hwang,Kwang Hyeon Baik

Japanese Journal of Applied Physics, (2013)

Bibtex

Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

Jisu Son, Cao Miao,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano,Yong Gon Seo,Sungmin Hwang,Kwang Hyeon Baik

Japanese Journal of Applied Physics, (2013)

Cited by2Bibtex

Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode

Doo Soo Kim,Sejoon Lee,Sanjeev Sharma,Sungmin Hwang,Yong Gon Seo

Applied Physics Letters, (2013)

Cited by4Bibtex

Analysis of the modified williamson-hall plot of non-polar a-plane GaN films

Jihoon Kim,Yong Gon Seo,Sungmin Hwang,Soohwan Jang,Kwang Hyeon Baik

Journal of the Korean Physical Society, no. 4 (2013): 601-605

Cited by1Bibtex

Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

Soohwan Jang, Hyonwoong Kim,Doo Soo Kim,Sungmin Hwang,Jihyun Kim,Kwang Hyeon Baik

Applied Physics Letters, (2013)

Bibtex

Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

Moontaek Hong,Taesoo Kim,Kinam Park,Sukkoo Jung, Younghak Chang, Gyuhyun Bang, Hyunggu Kim, Jina Jeon,Yoonho Choi,Sungmin Hwang,Junghoon Song

Journal of Applied Physics, (2013)

Cited by1Bibtex

Structural and electrical anisotropies of Si-doped a-plane (11–20) GaN films with different SiNx interlayers

Ji Hoon Kim,Sungmin Hwang,Yong Gon Seo,Kwang Hyeon Baik,Jung Ho Park

Semiconductor Science and Technology, (2013)

Cited by4Bibtex

Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

Ji Hoon Kim,Sungmin Hwang,Yong Gon Seo,Doo Soo Kim,Kwang Hyeon Baik,Jung Ho Park

(2012)

Bibtex

Effect of r-plane (1–102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11–20) GaN

Ji Hoon Kim,Jung Ho Park,Sungmin Hwang,Kwang Hyeon Baik

Journal of the Korean Physical Society, no. 10 (2012): 1649-1655

Bibtex

High brightness nonpolar a-plane (11–20) GaN light-emitting diodes

Sukkoo Jung, Younghak Chang,Kyuhyun Bang, Hyunggu Kim,Yoonho Choi,Sungmin Hwang,Kwang Hyeon Baik

Semiconductor Science and Technology, (2012)

Cited by18Bibtex

Thermal degradation of Ohmic contacts on semipolar (11–22) GaN films grown on m-plane (1–100) sapphire substrates

Doo Soo Kim,Yong Gon Seo,Ji Hoon Kim,Sungmin Hwang,Kwang Hyeon Baik

Journal of the Korean Physical Society, (2012)

Bibtex

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A Y Polyakov,Leewoon Jang, Dongseob Jo,Inhwan Lee,N B Smirnov,A V Govorkov,E A Kozhukhova,Kwang Hyeon Baik,Sungmin Hwang

Journal of Applied Physics, (2012)

Cited by4Bibtex

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