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个人简介
Tetsuo Endoh (Fellow, IEEE) received the B.S. degree in physics from the University of Tokyo, Tokyo, Japan, in 1987, and the Ph.D. degree in electronic engineering from Tohoku University, Sendai, Japan, in 1995.
In 1987, he joined the ULSI Research Center, Toshiba Company, Kawasaki City, Japan, and was engaged in the R&D and mass production of nand memory. In 1995, he became a Lecturer with the Research Institute of Electrical Communication, Tohoku University. He is currently a Professor with the Graduate School of Engineering, Director of the Center for Innovative Integrated Electronic Systems, and Deputy Director of the Center for Science and Innovation in Spintronics, both with Tohoku University. He is interested in power-management technology, such as GaN on Si-based power devices and power electronics from circuits to modules and systems for automotive applications, and so on. His current research interests include advanced memory technology, 3-D structure devices, beyond-CMOS technology, and low-power processor technology, such as 3-D nand memory, STT-/SOT-MRAM, vertical GAA mosfet, CMOS/Spintronics hybrid circuits, spintronics-based nonvolatile logic from IoT processors to AI processors, and so on.
Dr. Endoh was the recipient of the 14th Prime Minister's Award for his contribution to industry-academia-government collaboration in 2016 and the National Invention Award, the 21st-century Encouragement of Invention Prize, for his contribution to the invention of 3-D nand memory in 2017.
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Proceedings of the IEICE General Conferenceno. 2 (2001): 92
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Proceedings of the IEICE General Conferenceno. 2 (2000): 87
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#Papers: 2
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