T. P. Ma

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Papers72 papers

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Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

N. Gong,Xiankai Sun,Hao Jiang,Kuei-Shu Chang-Liao,Qiangfei Xia,T. P. Ma

Applied Physics Letters, no. 26 (2018): 262903

Bibtex

Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel

Shufeng Ren, Maruf A. Bhuiyan,Heng Wu,Rong Jiang,Kai Ni,En Xia Zhang,Robert A. Reed, Daniel M. Fleetwood,Peide D. Ye,T. P. Ma

IEEE Transactions on Nuclear Science, no. 1 (2017): 176-180

EIWOSBibtex

Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

Sung-Jae Chang, Hong Zhou, Nanbo Gong,Dong-Min Kang,Jong-Won Lim,Mengwei Si,Peide D. Ye,T. P. Ma

IEEE Electron Device Letters, no. 4 (2017): 441-444

Cited by3EIWOSBibtex

Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs

Xin Wan,Oliver Keith Baker,Michael W. McCurdy,En Xia Zhang, Max Zafrani, Simon P. Wainwright,Jun Xu,Han Liang Bo,Robert A. Reed,Daniel M. Fleetwood,T. P. Ma

IEEE Transactions on Nuclear Science, no. 1 (2017): 253-257

Cited by1EIWOSBibtex

SEB Hardened Power MOSFETs With High-K Dielectrics

Xin Wan, Wei Song Zhou, Shufeng Ren, Dao Guang Liu,Jun Xu, Han Liang Bo,En Xia Zhang,Ronald D. Schrimpf,Daniel M. Fleetwood,T. P. Ma

IEEE Transactions on Nuclear Science, no. 6 (2015): 2830-2836

EIWOSBibtex

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

Shufeng Ren,Mengwei Si,Kai Ni, Xin Wan,Jin Chen,Sungjae Chang,Xiao Sun,En Xia Zhang,Robert A. Reed,Daniel M. Fleetwood,Peide D. Ye,Sharon Cui

IEEE Transactions on Nuclear Science, no. 6 (2015): 2888-2893

EIWOSBibtex

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Jie Yang,Sharon Cui,T P Ma,Tinghsiang Hung,Digbijoy N Nath,Sriram Krishnamoorthy,Siddharth Rajan

Applied Physics Letters, (2013)

Cited by9Bibtex

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Xiao Sun,Omair I Saadat, K S Changliao,Tomas Palacios,Sharon Cui,T P Ma

Applied Physics Letters, (2013)

Cited by62Bibtex

Determination of trap energy levels in AlGaN/GaN HEMT

Jie Yang,Shuguang Cui,T P Ma,Tinghsiang Hung, Dipen Nath,Sriram Krishnamoorthy,Sreeraman Rajan

(2013)

Cited by4Bibtex

Total Ionizing Dose Radiation Effects in Al 2 O $_{3}$ -Gated Ultra-Thin Body In $_{0.7}$ Ga $_{0.3}$ As MOSFETs

X Sun,Fei Xue, Jianxin Chen,En Xia Zhang, Shaoyang Cui,J Lee,D M Fleetwood,T P Ma

IEEE Transactions on Nuclear Science, (2013)

Cited by9Bibtex

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Jie Yang,Sharon Cui,T P Ma,Tinghsiang Hung,Digbijoy N Nath,Sriram Krishnamoorthy,Siddharth Rajan

Applied Physics Letters, (2013)

Cited by8Bibtex

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Xiao Sun,C Merckling,Guy Brammertz,Dennis Lin,Johan Dekoster,Sharon Cui,T P Ma

Journal of Applied Physics, (2012)

Cited by11Bibtex

Effect of H on interface properties of Al2O3/In0.53Ga0.47As

Zuoguang Liu,Sharon Cui,P Shekhter,Xiao Sun,Lior Kornblum,Jie Yang,M Eizenberg, K S Changliao,T P Ma

Applied Physics Letters, (2011)

Cited by14Bibtex

Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface

P Shekhter,Lior Kornblum,Zuoguang Liu,Sharon Cui,T P Ma,M Eizenberg

Applied Physics Letters, (2011)

Cited by6Bibtex

Retention mechanism study of the ferroelectric field effect transistor

Xiao Pan,T P Ma

Applied Physics Letters, (2011)

Cited by14Bibtex

The dual role of PZT in metal-PZT-Al 2 O 3 structure for nonvolatile memory cell

Sharon Cui,Dongseog Eun,Bozidar Marinkovic,Chengyi Peng, Xiao Pan,Xiao Sun,Hur Koser,T P Ma

(2010)

Bibtex

A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention

C Y Peng,W Q Zhang,Xiaowei Sun,Z G Liu,Sharon Cui,T P Ma,Lior Kornblum,M Eizenberg

Device Research Conference, pp.261-262, (2010)

EIWOSBibtex

High-Quality Al2O3 for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

Sharon Cui,ChengYi Peng,Wenqi Zhang,Xiao Sun,Jie Yang,Zuoguang Liu,Lior Kornblum,Moshe M. Eizenberg,T. P. Ma

IEEE Electron Device Letters, no. 12 (2010): 1143-1145

Cited by2WOSSCOPUSBibtex

Inelastic electron tunneling spectroscopy study of ultrathin Al[sub 2]O[sub 3]–TiO[sub 2] dielectric stack on Si

Mingfeng Chang,T P Ma,Zuoguang Liu,Sharon Cui,Lior Kornblum,M Eizenberg

Applied Physics Letters, (2010)

Bibtex

High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$ ) Nonvolatile Memory Technology

Sharon Cui,Chengyi Peng,Wenqi Zhang,Xiao Sun,Jie Yang,Zuoguang Liu,Lior Kornblum,M Eizenberg,T P Ma

IEEE Electron Device Letters, (2010)

Cited by4Bibtex

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Papers72 papers

T. P. Ma