Tomás Palacios

Professor

Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology

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Institute of Technology(MIT), my group focuses on advanced electronic devices based on new semiconductors, especially nitrides and graphene. These semiconductors are, probably, the most complete semiconductor family ever, and we are currently using them in 4 different applications:

High frequency electronics (>300 GHz)
High voltage electronics (600 V – 10 kV) for power conversion
Digital electronics in a post-Si scenario
New concepts for biosensors and energy harvesting devices

Papers277 papers

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Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells

Elaine McVay, Ahmad Zubair,Yuxuan Lin, Amirhasan Nourbakhsh,Tomás Palacios

ACS applied materials & interfaces, (2020)

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(Ultra)Wide-Bandgap Vertical Power FinFETs

Yuhao Zhang,Tomas Palacios

IEEE Transactions on Electron Devices, pp.1-12, (2020)

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Opportunities and Challenges of Ambient Radio-Frequency Energy Harvesting

Xu Zhang,Jesús Grajal,Marisa López-Vallejo, Elaine McVay,Tomás Palacios

Joule, no. 6 (2020): 1148-1152

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Barrier heights and Fermi level pinning in metal contacts on p-type GaN

Sumaiya Wahid, Nadim Chowdhury,Kawsar Alam,Tomás Palacios

Applied Physics Letters, no. 21 (2020): 213506

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Realization of 2D crystalline metal nitrides via selective atomic substitution

Jun Cao, Tianshu Li, Hongze Gao,Yuxuan Lin, Xingzhi Wang,Haozhe Wang,Tomás Palacios,Xi Ling

Science advances, no. 2 (2020)

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Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors

G. Rughoobur,J. Zhao, L. Jain,A. Zubair,T. Palacios,J. Kong,A. I. Akinwande

2020 Device Research Conference (DRC), pp.1-2, (2020)

EIWOSBibtex

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

A. Zubair, J. Perozek, J. Niroula, O. Aktas, V. Odnoblyudov,T. Palacios

2020 Device Research Conference (DRC), pp.1-2, (2020)

EIWOSBibtex

Switching Performance Analysis of Vertical GaN FinFETs: Impact of Inter-Fin Designs

Hengyu Wang, Ming Xiao,Kuang Sheng,Tomas Palacios,Yuhao Zhang

IEEE Journal of Emerging and Selected Topics in Power Electronics, pp.1-1, (2020)

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GaN Nanowire Field Emitters with a Self-Aligned Gate Process

Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng,Akintunde I. Akinwande,Tomás Palacios

2020 Device Research Conference (DRC), pp.1-2, (2020)

EIWOSBibtex

Materials and Technology Issues for the Next Generation of Power Electronic Devices

Ahmad Zubair, John Niroula, Nadim Chowdhury,Yuhao Zhang, Jori Lemettinen,Tomás Palacios

2020 Device Research Conference (DRC), pp.1-2, (2020)

EIWOSBibtex

Regrowth-free GaN-based Complementary Logic on a Si Substrate

Nadim Chowdhury, Qingyun Xie, Mengyang Yuan, Kai Cheng,Han Wui Then,Tomas Palacios

IEEE Electron Device Letters, no. 6 (2020): 820-823

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ON-Resistance in Vertical Power FinFETs

Ming Xiao,Tomás Palacios,Yuhao Zhang

IEEE Transactions on Electron Devices, no. 9 (2019): 3903-3909

EIWOSBibtex

Additive manufacturing of patterned 2D semiconductor through recyclable masked growth

Yunfan Guo, Pin-Chun Shen,Cong Su, Ang-Yu Lu,Marek Hempel,Yimo Han, Qingqing Ji,Yuxuan Lin, Enzheng Shi, Elaine McVay,Letian Dou,David A Muller

Proceedings of the National Academy of Sciences of the United States of America, no. 9 (2019): 3437-3442

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Two-dimensional MoS 2 -enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

Xu Zhang,Jesús Grajal,Jose Luis Vazquez-Roy,Ujwal Radhakrishna,Xiaoxue Wang,Winston Chern,Lin Zhou,Yuxuan Lin, Pin-Chun Shen, Xiang Ji,Xi Ling, Ahmad Zubair

Nature, no. 7744 (2019): 368-372

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Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Yuxuan Lin,Qiong Ma, Pin-Chun Shen, Batyr Ilyas,Yaqing Bie, Albert Liao, Emre Ergeçen, Bingnan Han,Nannan Mao,Xu Zhang, Xiang Ji,Yuhao Zhang

Science advances, no. 6 (2019)

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Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm

Jori Lemettinen, Nadim Chowdhury,Hironori Okumura, Iurii Kim,Sami Suihkonen,Tomás Palacios

IEEE Electron Device Letters, no. 8 (2019): 1245-1248

EIWOSBibtex

Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

Hironori Okumura, Yuji Kato,Takayoshi Oshima,Tomás Palacios

Japanese Journal of Applied Physics, (2019)

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Paraffin-enabled graphene transfer

Wei Sun Leong,Haozhe Wang,Jingjie Yeo,Francisco J Martin-Martinez, Ahmad Zubair, Pin-Chun Shen, Yunwei Mao,Tomas Palacios,Markus J Buehler, Jin-Yong Hong,Jing Kong

Nature communications, no. 1 (2019): 867

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Deep Learning Assisted Optical Identification of Exfoliated Two-Dimensional Crystals

Bingnan Han,Yuxuan Lin, Wenyue Li, Nannan Mao,Yafang Yang,Haozhe Wang,Wei Sun Leong,Pablo Jarillo-Herrero,Tomas Palacios, Jihao Yin,Jing Kong

Bulletin of the American Physical Society, (2019)

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Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond

Martins Luiz G. Pimenta, Silva Diego L., Smith Jesse S.,Lu Ang-Yu,Su Cong,Hempel Marek, Occhialini Connor, Ji Xiang, Pablo Ricardo, Alencar Rafael S., Souza Alan C. R.,de Oliveira Alan B.

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