Tetsuya Tohei

Institute of Engineering Innovation, The University of Tokyo, Tokyo, 113-8656 Japan

Show Academic Trajectory

Ego Network

D-Core

Research Interests

Author Statistics

Experience

Education

Bio

None

Papers89 papers

Sort

By YearBy Citation

Investigation of morphology and current leakage properties for individual threading dislocations in a HVPE-GaN bulk single crystal grown on a Na-flux-GaN crystal

Takeaki Hamachi,Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi,Yusuke Mori,Akira Sakai

The Japan Society of Applied Physics, (2020)

Bibtex

Local piezoelectric properties in Na-flux GaN bulk single crystals

A. Ueda, T. Hamachi, A. Okazaki,S. Takeuchi,T. Tohei,M. Imanishi,M. Imade,Y. Mori,A. Sakai

Journal of Applied Physics, no. 12 (2020): 125110

Bibtex

Implementation of Pavlovian conditioning in 4-terminal planar TiO 2-x memristive devices

Ryotaro Miyake, Yusuke Hayashi,Tetsuya Tohei,Akira Sakai

The Japan Society of Applied Physics, (2020)

Bibtex

Fabrication of GaO x based crossbar array memristive devices and their resistive switching properties

Mamoru Joko, Yusuke Hayashi,Tetsuya Tohei,Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS, (2020)

Bibtex

Thermal Strain Analysis on High-Temperature-Annealed Sputtered AlN

Yusuke Hayashi, Kenjiro Uesugi,Kanako Shojiki,Hideto Miyake,Tetsuya Tohei,Akira Sakai

The Japan Society of Applied Physics, (2020)

Bibtex

[Young Scientist Presentation Award Speech] Finite Element Analysis of Resistive Switching Characteristics in Memristive Devices

Zenya Nagata,Tetsuya Tohei,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Direct Observation of Local Piezoelectric Lattice Distortion in a Nitride Semiconductor HEMT Device Using Synchrotron Radiation Nanobeam X-ray Diffraction Analysis

Akira Ueda,Tetsuya Tohei, Yuji Ando,Tamotsu Hashizume,Yasuhiko Imai, Kazushi Sumitani,Shigeru Kimura,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Development of GaO x Based Crossbar Array Memristor and Its Resistive Switching Properties

Mamoru Joko, Yusuke Hayashi,Tetsuya Tohei, Akira Sakai

(2019)

Bibtex

Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO 2−x Memristive Devices

Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka,Tetsuya Tohei,Nobuyuki Ikarashi,Akira Sakai

Scientific Reports, no. 1 (2019): 1-1

Bibtex

Depth-resolved nanobeam X-ray diffraction analysis on a high-Ge-content SiGe film with a compositionally graded layer on a Si substrate

Kazuki Shida,Tetsuya Tohei, Yusuke Hayashi, Kazushi Sumitani,Yasuhiko Imai,Shigeru Kimura,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO 2 single crystals

Shotaro Takeuchi, Takuma Shimizu, Tsuyoshi Isaka,Tetsuya Tohei,Nobuyuki Ikarashi,Akira Sakai

Scientific reports, no. 1 (2019): 2601

WOSBibtex

Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

Takeaki Hamachi, Masato Fujimoto,Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi,Yusuke Mori,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Implementation of synaptic properties by four-terminal TiO 2-x thin film memristive device

Ryotaro Miyake, Yusuke Hayashi,Tetsuya Tohei,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Defect analysis for homoepitaxial GaN thick films grown by OVPE method

Miki Manabe,Tohei Tetsuya, Takino Junichi, Sumi Tomoaki, Imanishi Masayuki,Mori Yusuke, Sakai Akira

The Japan Society of Applied Physics, (2019)

Bibtex

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO 2-x Memristive Devices

Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka,Tetsuya Tohei,Nobuyuki Ikarashi,Akira Sakai

Scientific reports, no. 1 (2019): 10013

WOSBibtex

Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method

Takeaki Hamachi,Tetsuya Tohei, Masayuki Imanishi,Yusuke Mori,Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS, (2019)

Bibtex

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

Kazuki Shida, Nozomi Yamamoto,Tetsuya Tohei, Masayuki Imanishi,Yusuke Mori,Kazushi Sumitani,Yasuhiko Imai,Shigeru Kimura,Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS, (2019)

Bibtex

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

Takeaki Hamachi,Tetsuya Tohei, Masayuki Imanishi,Yusuke Mori,Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS, no. 5 (2019): 050918

Bibtex

Finite Element Analysis of Resistive Switching Characteristics in Memristive Devices

Zenya Nagata,Tetsuya Tohei,Akira Sakai

The Japan Society of Applied Physics, (2019)

Bibtex

Leakage current analysis for dislocations in the modified Na-flux GaN single crystal

Takeaki Hamachi,Shotaro Takeuchi,Tetsuya Tohei, Masayuki Imanishi,Mamoru Imade,Yusuke Mori,Akira Sakai

The Japan Society of Applied Physics, (2018)

Bibtex

View All

Base Info Papers Patents Projects

Tetsuya ToheiBinding

Papers89 papers

Tetsuya Tohei