Tomohiro Yoshida

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Papers12 papers

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A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Tetsuya Suemitsu,Kengo Kobayashi, Shinya Hatakeyama, Nana Yasukawa,Tomohiro Yoshida,Taiichi Otsuji,Daniel Piedra,Tomas Palacios

Japanese Journal of Applied Physics, no. 1 (2016)

Bibtex

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

Kenta Sugawara,Tetsuya Kawasaki, Gen Tamamushi, Hussin Mastura,Adrian Dobroiu,Tomohiro Yoshida,Tetsuya Suemitsu,Hirokazu Fukidome,Maki Suemitsu,Victor Ryzhii,Katsumi Iwatsuki,Shigeru Kuwano

Journal of Lightwave Technology, no. 8 (2016): 2011-2019

Cited by8EIWOSBibtex

Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network

Kenta Sugawara,Tetsuya Kawasaki, Gen Tamamushi, Mastura B Hussin,Adrian Dobroiu,Tomohiro Yoshida,Tetsuya Suemitsu,Hirokazu Fukidome,Maki Suemitsu, Ryzhii Victor,Katsumi Iwatsuki,Shigeru Kuwano

(2015)

Cited by2Bibtex

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

Kengo Kobayashi, Shinya Hatakeyama,Tomohiro Yoshida,Yuhei Yabe,Daniel Piedra,Tomas Palacios,Taiichi Otsuji,Tetsuya Suemitsu

Applied Physics Express, (2014)

Cited by11Bibtex

Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

Kengo Kobayashi, Shinya Hatakeyama,Tomohiro Yoshida,Daniel Piedra,Tomas Palacios,Taiichi Otsuji,Tetsuya Suemitsu

Solid-state Electronics, (2014)

Cited by14Bibtex

Millimeterwave-photomixing by InGaAs channel HEMTs and graphene channel FETs

Tetsuya Kawasaki,Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu,Takayuki Watanabe,Hiroki Sugiyama, Hiroyuki Wako,Jun-ichi Kani,Jun Terada,Shigeru Kuwano,Hiroki Ago,Kenji Kawahara

IEICE technical report. Electron devices, no. 387 (2014): 9-13

Bibtex

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

Myung-Ho Jung,Goon-Ho Park,Tomohiro Yoshida,Hirokazu Fukidome,Tetsuya Suemitsu,Taiichi Otsuji,Maki Suemitsu

Proceedings of the IEEE, no. 7 (2013): 1603-1608

Cited by19EIWOSBibtex

InGaAs HEMTs with T‐gate electrodes formed by multi‐layer SiCN molds

Tomohiro Yoshida,Kengo Kobayashi,Taiichi Otsuji,Tetsuya Suemitsu

Physica Status Solidi (c), (2013)

Cited by6Bibtex

InGaAs HEMTs with T-gate electrodes foemed by multi-layer SiCN molds

Tomohiro Yoshida,Kengo Kobayashi, Tanchi Otsuji,Tetsuya Suemitsu

IEICE technical report. Electron devices, no. 380 (2013): 79-84

Bibtex

InGaAs HEMTs with T‐gate electrodes fabricated using HMDS SiN mold

Tomohiro Yoshida,Keisuke Akagawa,Taiichi Otsuji,Tetsuya Suemitsu

Physica Status Solidi (c), (2012)

Cited by4Bibtex

MB2 Urban Environment 1

Fuesang Liena, Eugene Yee, Hua Ji,Tetsuya Takemi, Tsuyoshi Arimitsu, Masahiro Tamai,Kiyoshi Sasaki,Akashi Mochida,Tomohiro Yoshida,Hiroshi Yoshino,H Watanabe, Seiichi Itabashi

(2006)

Bibtex

TB1 Urban Environment 2

A F Kurbatskiy,A V Lonchakov,L I Kurbatskaya,Kenji Takagi, Toru Yamanaka,Koji Kondo, Kengo Takahashi,Akashi Mochida,Hiroshi Yoshino,Teruaki Mitamura,Satoshi Miyauchi,Tomohiro Yoshida

(2006)

Bibtex

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