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Travis J. Anderson

Naval Research Laboratory, Washington, DC 20375, USA

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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Geoffrey M. Foster,Andrew Koehler, Mona Ebrish, James Gallagher,Travis Anderson, Brenton Noesges,Leonard Brillson, Brendan Gunning,Karl D. Hobart,Francis Kub

Applied Physics Letters, no. 8 (2020): 082103

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A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

Mona A. Ebrish,Travis J. Anderson,Andrew D. Koehler, Geoffrey M. Foster, James C. Gallagher,Robert J. Kaplar, Brendan P. Gunning,Karl D. Hobart

IEEE Transactions on Semiconductor Manufacturing, no. 4 (2020): 546-551

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p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

V. Meyers, E. Rocco,T. J. Anderson, J. C. Gallagher, M. A. Ebrish,K. Jones,M. Derenge, M. Shevelev, V. Sklyar, K. Hogan, B. McEwen,F. Shahedipour-Sandvik

Journal of Applied Physics, no. 8 (2020): 085701

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Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy

Petra Specht,Ronny Kirste,Zlatko Sitar,Travis Anderson,Andrew Koehler,Christian Kisielowski

Microscopy and Microanalysis, (2020): 3064-3066

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Room-temperature skyrmions in strain-engineered FeGe thin films

Sujan Budhathoki, Arjun Sapkota, Ka Ming Law, Smriti Ranjit, Bhuwan Nepal, Brian D. Hoskins, Arashdeep Singh Thind,Albina Y. Borisevich, Michelle E. Jamer,Travis J. Anderson,Andrew D. Koehler,Karl D. Hobart

Physical Review B, no. 22 (2020)

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Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices

Habib Ahmad,Travis J. Anderson, James C. Gallagher, Evan A. Clinton, Zachary Engel, Christopher M. Matthews,W. Alan Doolittle

Journal of Applied Physics, no. 21 (2020): 215703

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GaN-on-Diamond HEMT Technology with TAVG = 176 °C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Marko J. Tadjer,Travis J. Anderson,Mario G. Ancona,Peter E. Raad,Pavel Komarov, Tingyu Bai, James C. Gallagher,Andrew D. Koehler,Mark S. Goorsky,Daniel A. Francis,Karl D. Hobart,Fritz J. Kub

IEEE Electron Device Letters, pp.1-1, (2019)

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Demonstration of CuI as a P–N heterojunction to β-Ga2O3

James C. Gallagher,Andrew D. Koehler,Marko J. Tadjer, Nadeem A. Mahadik,Travis J. Anderson, Sujan Budhathoki, Ka-Ming Law,Adam J. Hauser,Karl D. Hobart,Francis J. Kub

Applied Physics Express, no. 10 (2019): 104005

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Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam

A. Khachatrian, N. J.-H. Roche,S. P. Buchner,A. D. Koehler,T. J. Anderson,D. McMorrow,S. D. Lalumondiere, J. P. Bonsall, E. C. Dillingham,D. L. Brewe

IEEE Transactions on Nuclear Science, no. 1 (2019): 368-375

EIWOSBibtex

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Alan G. Jacobs,Boris N. Feigelson,Jennifer K. Hite, Cameron A. Gorsak,Lunet E. Luna,Travis J. Anderson,Francis J. Kub

(2019)

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Polarity dependent implanted p-type dopant activation in GaN

Alan G. Jacobs,Boris N. Feigelson,Jennifer K. Hite, Cameron A. Gorsak,Lunet E. Luna,Travis J. Anderson,Francis J. Kub

Japanese Journal of Applied Physics, (2019)

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Lateral GaN JFET Devices on Large Area Engineered Substrates

Travis J. Anderson,Lunet E. Luna, Ozgur Aktas, Geoffrey M. Foster, Andrew D. Koehler,Marko J. Tadjer,Michael A. Mastro,Karl D. Hobart, Vladimir Odnoblyudov,Cem Basceri,Francis J. Kub

no. 12 (2019)

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Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices

Yekan Wang, Tingyu Bai,Chao Li,Marko J. Tadjer,Travis J. Anderson,Jennifer K. Hite,Michael A. Mastro,Charles R. Eddy,Karl D. Hobart,Boris N. Feigelson,Mark S. Goorsky

ECS Journal of Solid State Science and Technology, no. 2 (2019)

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High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

Nadeemullah A. Mahadik,Marko J. Tadjer, Peter L. Bonanno,Karl D. Hobart,Robert E. Stahlbush,Travis J. Anderson,Akito Kuramata

APL Materials, no. 2 (2019): 022513

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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

James C. Gallagher,Travis J. Anderson,Andrew D. Koehler, Geoffrey M. Foster, Alan G. Jacobs,Boris N. Feigelson,Michael A. Mastro,Jennifer K. Hite,Karl D. Hobart,Francis J. Kub

IEEE Transactions on Semiconductor Manufacturing, no. 4 (2019): 478-482

EIWOSBibtex

GaN-On-Diamond HEMT Technology With T_AVG = 176°C at P_DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Marko J. Tadjer,Travis J. Anderson, Mario G. Ancona,Peter E. Raad,Pavel Komarov, Tingyu Bai, James C. Gallagher,Andrew D. Koehler, Mark S. Goorsky, Daniel A. Francis,Karl D. Hobart,Fritz J. Kub

IEEE Electron Device Letters, no. 6 (2019): 881-884

EIWOSBibtex

Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors

Marko J. Tadjer,Travis J. Anderson, James C. Gallagher,Peter E. Raad,Pavel L. Komarov,Andrew D. Koehler,Karl D. Hobart,Fritz J. Kub

DRC, pp.1-2, (2018)

EIBibtex

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3

David I. Shahin,Marko J. Tadjer,Virginia D. Wheeler,Andrew D. Koehler,Travis J. Anderson, R Charles EddyJr.,Aris Christou

Applied Physics Letters, no. 4 (2018): 042107

Cited by2Bibtex

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Jennifer K. Hite,Travis J. Anderson,Lunet E Luna, J.C. Gallagher,Michael A. Mastro,J.A. Freitas,Charles R. Eddy

Journal of Crystal Growth, (2018): 352-356

Cited by3Bibtex

GaN Power Devices – Current Status and Future Directions

Travis J. Anderson, Srabanti Chowdhury, Ozgur Aktas, Michal Bockowski,Jennifer K. Hite

The Electrochemical Society interface, no. 4 (2018): 43-47

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