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Viorel Banu received the M.Sc. degree in microelectronics and semiconductor devices from the Politehnica University of Bucharest, Bucharest, Romania, in 1978.
From 1978 to 2005, he was with IPRS–Baneasa, Bucharest, as a Fabrication Leader for high-power thyristor’s and diode’s passivated structures. He was also charged with the device development and technology research of high-power devices (thyristors and diodes) and responsible for high vacuum technologies and PECVD deposition. In 1999, he was appointed as a Leader of the Department of High Power Devices and Applications. In parallel with his main responsibilities, he worked from 2001 to 2007 as an Associate Designer for Bi-CMOS analog-mixed integrated circuits with O2Micro, Ltd. In 2007, he joined the Group of Power Devices and System from IMB–CNM (CSIC), Barcelona, Spain, as a Technology Engineer for WBG semiconductors. Here, he is dealing with research and characterization of silicon carbide (SiC) and gallium nitride (GaN) devices, new test methods conception, test instruments construction, and also with the design of one of the first generation of integrated circuits on SiC. He has authored more than 100 scientific works in refereed journals or conferences and is coauthored for four patents and six innovations.
Mr. Banu was a Referee for more than eight international publications and conferences and a Chairman for International Semiconductor Conference (CAS). He was awarded eight times for his scientific works.
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论文共 26 篇作者统计合作学者相似作者
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2019 European Space Power Conference (ESPC) (2019)
Materials science forum (2019): 768-772
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGYno. 4 (2017): 369-384
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#Papers: 26
#Citation: 152
H-Index: 5
G-Index: 12
Sociability: 4
Diversity: 2
Activity: 2
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