Winston Chern

MIT Microsyst. Technol. Labs., Cambridge, MA, USA|c|

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Two-dimensional MoS 2 -enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

Xu Zhang,Jesús Grajal,Jose Luis Vazquez-Roy,Ujwal Radhakrishna,Xiaoxue Wang,Winston Chern,Lin Zhou,Yuxuan Lin, Pin-Chun Shen, Xiang Ji,Xi Ling, Ahmad Zubair

Nature, no. 7744 (2019): 368-372

WOSBibtex

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Redwan N. Sajjad,Winston Chern,Judy L. Hoyt,Dimitri A. Antoniadis

IEEE Transactions on Electron Devices, no. 11 (2016): 4380-4387

EIWOSBibtex

Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

James T. Teherani,Sapan Agarwal,Winston Chern,Paul M. Solomon,Eli Yablonovitch,Dimitri A. Antoniadis

Journal of Applied Physics, no. 8 (2016): 084507

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Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

Redwan N. Sajjad,Winston Chern,Judy L. Hoyt,Dimitri A. Antoniadis

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A framework for generation and recombination in tunneling field-effect transistors

James T Teherani,Winston Chern, Sapan Agarwal,Judy L Hoyt,Dimitri A Antoniadis

(2015)

Cited by1Bibtex

Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current

James T Teherani,Winston Chern,Dimitri A Antoniadis,Judy L Hoyt

(2014)

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On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures

Yuanwei Dong,Winston Chern,P M Mooney,Judy L Hoyt,Guangrui Xia

Semiconductor Science and Technology, (2014)

Cited by4Bibtex

Simulation of enhanced hole ballistic velocity in asymmetrically strained Germanium nanowire trigate p-MOSFETs

James T Teherani,Winston Chern,Dimitri A Antoniadis,Judy L Hoyt

(2013)

Cited by4Bibtex

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

James T Teherani,Winston Chern,Dimitri A Antoniadis,Judy L Hoyt, Liliana Ruiz,C D Poweleit, J A Menendez

Physical Review B, (2012)

Cited by38Bibtex

High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs

Winston Chern,Pouya Hashemi,James T Teherani,Tao Yu,Yuanwei Dong,Guangrui Xia,Dimitri A Antoniadis,Judy L Hoyt

Electron Devices Meeting, pp.16.5.1-16.5.4, (2012)

Cited by22EIWOSBibtex

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Winston ChernBinding

Papers10 papers

Winston Chern