Yi-Hsuan Hsiao

Department of Obstetrics and Gynecology, Changhua Christian Hospital, Changhua, Taiwan

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Papers62 papers

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Metformin induces apoptosis and inhibits migration by activating the AMPK/p53 axis and suppressing PI3K/AKT signaling in human cervical cancer cells

Ya-Hui Chen,Shun-Fa Yang, Chueh-Ko Yang, Horng-Der Tsai,Tze-Ho Chen,Ming-Chih Chou,Yi-Hsuan Hsiao

Molecular medicine reports, no. 1 (2021): 1-1

WOSBibtex

A Novel SuperSteep Subthreshold Slope Dual-Channel FET Utilizing a Gate-Controlled Thyristor Mode-Induced Positive Feedback Current

Wei-Chen Chen,Hang-Ting Lue,Yi-Hsuan Hsiao,Chih-Yuan Lu

IEEE Transactions on Electron Devices, no. 3 (2017): 1336-1342

Cited by2EIWOSBibtex

Impact of ${\hbox{V}}_{\rm pass} $ Interference on Charge-Trapping NAND Flash Memory Devices

Yihsuan Hsiao,Hangting Lue,Weichen Chen,Kuopin Chang,Bingyue Tsui,Kuangyeu Hsieh,Chihyuan Lu

IEEE Transactions on Device and Materials Reliability, (2015)

Cited by1Bibtex

Charge storage efficiency (CSE) effect in modeling the incremental step pulse programming (ISPP) in charge-trapping 3D NAND flash devices

Wei-Chen Chen,Hang-Ting Lue,Yi-Hsuan Hsiao,Tzu-Hsuan Hsu,Xi-Wei Lin,Chih-Yuan Lu

international electron devices meeting, (2015)

Bibtex

Ultra-High Bit Density 3D NAND Flash-Featuring-Assisted Gate Operation

Yihsuan Hsiao,Hangting Lue,Weichen Chen,Bingyue Tsui,Kuangyeu Hsieh,Chihyuan Lu

IEEE Electron Device Letters, no. 10 (2015): 1015-1017

Cited by1EIWOSBibtex

A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

Hang-Ting Lue,Tzu-Hsuan Hsu,Chen-Jun Wu,Wei-Chen Chen,Teng-Hao Yeh,Kuo-Pin Chang,Chih-Chang Hsieh,Pei-Ying Du,Yi-Hsuan Hsiao, Yu-Wei Jiang, Guan-Ru Lee,Roger Lo

international electron devices meeting, (2015): 44-47

Bibtex

The Impact of Vpass Interference on Charging-Trapping NAND Flash Memory Devices

Kuangyeu Hsieh,Chihyuan Lu,Kuopin Chang,Weichen Chen,Hangting Lue,Yihsuan Hsiao,Bingyue Tsui

IEEE Transactions on Device and Materials Reliability, (2015)

Bibtex

MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

Yihsuan Hsiao,Yenhao Shih,Shihhung Chen,Hangting Lue

(2015)

Bibtex

2089891 A Case of Pregnancy-Associated Breast Cancer Presenting Intra-Tumor Calcification

Yihsuan Hsiao,Shoujen Kuo,Horngder Tsai,Shoutung Chen

Ultrasound in Medicine and Biology, (2015)

Bibtex

Impact of Interference on Charge-Trapping NAND Flash Memory Devices

Yihsuan Hsiao,Hangting Lue,Weichen Chen,Kuopin Chang,Bingyue Tsui,Kuangyeu Hsieh,Chihyuan Lu

IEEE Transactions on Device and Materials Reliability, (2015)

Bibtex

ARRAY ARRANGEMENT FOR 3D NAND MEMORY

Yenhao Shih,Yihsuan Hsiao

(2014)

Cited by1Bibtex

Trapping-free string select transistors and ground select transistors for Vg-type 3D NAND Flash memory

Yanru Chen,Chenjun Wu,K P Chang,Chihping Chen,Tzuhsuan Hsu,Yihsuan Hsiao, F N Tsai, May Yang, Yude Huang, Loyueh Lin,Tahone Yang, Chiajun Chiou

Memory Workshop, pp.1-4, (2014)

Cited by2EIWOSBibtex

MEMORY ARCHITECTURE OF THIN FILM 3D ARRAY

Yihsuan Hsiao,Hangting Lue,Weichen Chen

(2014)

Bibtex

Integration of 3D stacked IC device with peripheral circuits

Hangting Lue,Yihsuan Hsiao,Shihhung Chen,Yenhao Shih

(2014)

Cited by3Bibtex

A novel dual-channel 3D NAND flash featuring both N-channel and P-channel NAND characteristics for bit-alterable Flash memory and a new opportunity in sensing the stored charge in the WL space

Hangting Lue,Peiying Du,Weichen Chen,Tenhao Yeh,Kuoping Chang,Yihsuan Hsiao,Yenhao Shih,Chunhsiung Hung,Chihyuan Lu

Electron Devices Meeting, pp.3.7.1-3.7.4, (2013)

Cited by6EIWOSBibtex

Study of hot-electron assisted programming for split-page 3D vertical gate (VG) NAND flash

Kuopin Chang,Hangting Lue,Chihshen Chang, Wenwei Yeh,Chihchang Hsieh,Yihsuan Hsiao,Yenhao Shih,Chihyuan Lu

(2013)

Bibtex

Thermally Assisted Flash Memory With Segmented Word Lines

Hangting Lue, Mingchang Kuo,Chihchang Hsieh,Kuopin Chang,Yihsuan Hsiao

(2013)

Cited by5Bibtex

Study of the interference and disturb mechanisms of split-page 3D vertical gate (VG) NAND flash and optimized programming algorithms for multi-level cell (MLC) storage

Chihchang Hsieh,Hangting Lue,Yung Chun Li,Kuoping Chang, Hsing Chen Lu,Hsiangpang Li,Weichen Chen,Yihsuan Hsiao, Shuonan Hung, Tiwen Chen,Yenhao Shih,Chihyuan Lu

VLSI Technology, pp.T156-T157, (2013)

Cited by12EIWOSBibtex

Memory Architecture of 3D Vertical Gate (3DVG) NAND Flash Using Plural Island-Gate SSL Decoding Method and Study of it's Program Inhibit Characteristics

Kuopin Chang,Hangting Lue,Chihping Chen,Yanru Chen,Yihsuan Hsiao,Chihchang Hsieh,Yenhao Shih,Tahone Yang,Kuangchao Chen,Chunhsiung Hung,Chihyuan Lu

(2012)

Cited by11Bibtex

Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage

Hangting Lue,Peiying Du,Chihping Chen,Weichen Chen,Chihchang Hsieh,Yihsuan Hsiao,Yenhao Shih,Chihyuan Lu

Electron Devices Meeting, pp.9.1.1-9.1.4, (2012)

Cited by10EIWOSBibtex

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