基本信息
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个人简介
Yifei Zhang received the B.S. degree in physics from Beijing University,
China, and the Ph.D. degree in applied physics from the University of Michigan at Ann Arbor, MI, USA.
He worked on FIFO memory and DDR buffer design at Integrated Device Technology from 1999 to 2002. He joined
Honeywell in 2002 and worked on radiation hardened I/O design, ESD protection, and SRAM chip design. He joined
Broadcom, San Jose, CA, USA, in 2005 and has contributed to Register-file, OTP, and embedded SRAM development. He has
been instrumental in the development of low-voltage SRAM design and test methodology. He is considered an expert in
memory analysis and simulation methodology.
研究兴趣
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2017 IEEE International Reliability Physics Symposium (IRPS)pp.PM-11.1-PM-11.4, (2017)
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