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研究成果概况
近年来主要工作集中在MEMS设计加工技术、微型加速度计及三代半导体技术研究工作,曾主持开发了表面牺牲层技术等MEMS加工工艺;主持了新型化学传感器,电容式、谐振式和隧穿式等MEMS器件的开发。目前工作重点为高精度微型加速度计和压力传感器。近十年来发表文章100余篇,获专利4项,合作出版教材1部,获国家发明二等奖1项,北京市科技进步一等奖一项,北京市精品教材一部。
Papers

Patents
Device structure and implementation method for improving GaN L-FER reverse breakdown voltage
WANG MAOJUN,GAO JINGNAN,YIN RUIYUAN,HAO YILONG
Application Date: 20170329
WANG MAOJUN,SHEN BO,TAO MING,LIU SHAOFEI,HAO YILONG
Application Date: 20170329
王茂俊,陶明,张川,郝一龙
Application Date: 20160303
WANG MAOJUN,TAO MING,HAO YILONG
Application Date: 20160303
Device structure for reducing current collapse of GaN power switching device
王茂俊,刘少飞,陶明,郝一龙
Application Date: 20160303
王茂俊,林书勋,陶明,郝一龙
Application Date: 20160303
Enhanced GaN FinFET based on multiple two-dimensional channel
王茂俊,张川,陶明,郝一龙
Application Date: 20150417
Device structure capable of improving mobility of enhanced GaN MOS channel and implementation method
王茂俊,桑飞,陶明,郝一龙
Application Date: 20150417
GaN-enhanced MOSFET formed based on digital wet grating etching technology and preparation method
王茂俊,王野,陶明,郝一龙
Application Date: 20150417
Wafer level test method for structure parameters of silicon micro accelerometer
张扬熙,高成臣,郝一龙
Application Date: 20150130
High temperature pressure sensor and process method thereof
刘冠东,崔万鹏,高成臣,郝一龙
Application Date: 20150119
Silica glass mosaic structure micromachine differential capacitance type pressure gauge
崔万鹏,刘冠东,胡杭,张帆顺,李哲,高成臣,郝一龙
Application Date: 20150119
High-temperature-resistant ohmic contact electrode structure and processing method thereof
刘冠东,张帆顺,崔万鹏,高成臣,郝一龙
Application Date: 20150119
Method for processing complex silica glass composite structure wafer
崔万鹏,刘冠东,李灵毓,桂一鸣,高成臣,郝一龙
Application Date: 20150119
Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology
张扬熙,高成臣,郝一龙
Application Date: 20130312