Yoshinao Kumagai

Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

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Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Reo Yamamoto, Nao Takekawa,Ken Goto,Toru Nagashima,Rafael Dalmau,Raoul Schlesser,Hisashi Murakami,Ramón Collazo,Bo Monemar,Zlatko Sitar,Yoshinao Kumagai

Journal of Crystal Growth, (2020): 125730

Bibtex

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Toru Nagashima, Reiko Ishikawa, Tatsuya Hitomi,Reo Yamamoto, Junji Kotani,Yoshinao Kumagai

Journal of Crystal Growth, (2020): 125644

Bibtex

Enhancement-Mode $eta$ -Ga 2 O 3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

Man Hoi Wong,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki

IEEE Electron Device Letters, no. 2 (2020): 296-299

EIWOSBibtex

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Ken Goto, Nao Takekawa,Toru Nagashima,Reo Yamamoto,Galia Pozina,Rafael Dalmau,Raoul Schlesser,Ramón Collazo,Bo Monemar,Zlatko Sitar,Michał Boćkowski,Yoshinao Kumagai

Physica Status Solidi (a), pp.2000465, (2020)

Bibtex

Cathodoluminescence study of Si-doped AlN substrates grown by HVPE on PVT-AlN

Shigefusa Chichibu,Kohei Shima,Kazunobu Kojima, Baxter Moody,Seiji Mita,Ramon Collazo,Zlatko Sitar,Yoshinao Kumagai,Akira Uedono

The Japan Society of Applied Physics, (2020)

Bibtex

Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

Masataka Higashiwaki,Man Hoi Wong,Ken Goto,Hisashi Murakami,Yoshinao Kumagai

ieee electron devices technology and manufacturing conference, (2020)

Bibtex

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Qiang Liu, Naoki Fujimoto, Jian Shen,Shugo Nitta, Atsushi Tanaka,Yoshio Honda,Zlatko Sitar, Michał Boćkowski,Yoshinao Kumagai,Hiroshi Amano

Journal of Crystal Growth, (2020): 125643

Bibtex

Influence of Growth Temperature and Input VI/III Ratio on HVPE Growth of β-Ga 2 O 3

Ken Goto, Ryo Miura, Takashi Kamo, Nao Takekawa,Hisashi Murakami,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

Bibtex

Phase Control in the Metastable Gallium Oxide Growth on c-plane Sapphire Substrates by Tri-halide Vapor Phase Epitaxy

Nao Takekawa, Mayuko Sato,Hisashi Murakami,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

Bibtex

Growth of Single Crystalline c-In 2 O 3 (111) Layers on Off-Axis c-Plane Sapphire Substrates by Halide Vapor Phase Epitaxy

Yuya Saimoto, Kenta Nagai, Hidetoshi Nakahata, Keita Konishi,Yoshinao Kumagai

international conference on indium phosphide and related materials, (2019)

Bibtex

Current Aperture Vertical $eta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

Man Hoi Wong, Ken Goto,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki

IEEE Electron Device Letters, no. 3 (2019): 431-434

Bibtex

Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Chia-Hung Lin, Yohei Yuda,Man Hoi Wong, Mayuko Sato, Nao Takekawa, Keita Konishi, Tatsuro Watahiki,Mikio Yamamuka,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki

international conference on indium phosphide and related materials, no. 9 (2019): 1487-1490

EIWOSBibtex

Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs

Man Hoi Wong,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki

DRC, pp.225-226, (2019)

EIBibtex

Invited: Process and Characterization of Vertical Ga 2 O 3 Transistors

Masataka Higashiwaki,Man Hoi Wong, Ken Goto,Hisashi Murakami,Yoshinao Kumagai

international meeting for future of electron devices, kansai, (2019)

Bibtex

Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation

Chia-Hung Lin, Yohei Yuda,Man Hoi Wong, Mayuko Sato, Nao Takekawa,Keita Konishi,Tatsuro Watahiki,Mikio Yamamuka,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki

IEEE Electron Device Letters, pp.1-1, (2019)

Bibtex

Dependence of thermal stability of GaN on substrate orientation and off-cut

Kento Yoshida, Sakiko Yamanobe,Keita Konishi, Shinya Takashima, Masaharu Edo,Bo Monemar,Yoshinao Kumagai

JAPANESE JOURNAL OF APPLIED PHYSICS, (2019)

Bibtex

Influence of Indium-precursors on Halide Vapor Phase Epitaxy of In 2 O 3

Kenta Nagai, Nami Tanaka, Yuya Saimoto,Rie Togashi, Nao Takekawa, Ken Goto,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

Bibtex

Study of Si-ion-implantation Process on High-purity HVPE-AlN Substrates to Form n-type Region

Yudai Shimizu, Daichi Saito, Nao Takekawa, Ken Goto,Toru Nagashima, Reo Yamamoto,Bo Monemar,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

Bibtex

High-speed Homoepitaxial Growth of AlN by HVPE and Its Influences on Crystalline Quality

Daichi Saito, Yudai Shimizu, Nao Takekawa, Ken Goto,Toru Nagashima, Reo Yamamoto,Bo Monemar,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

Bibtex

Influence of NH 3 partial pressure on homoepitaxial growth of AlN by HVPE

Nao Takekawa, Daichi Saito, Yudai Shimizu, Ken Goto,Toru Nagashima, Reo Yamamoto,Yoshinao Kumagai

The Japan Society of Applied Physics, (2019)

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Yoshinao KumagaiBinding

Papers262 papers

Yoshinao Kumagai