Youngboo Moon

School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151–742, South Korea

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Papers47 papers

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Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy

Trong Si Ngo, Duc Duy Le, Jungkuk Lee,Soon-Ku Hong,Jun-Seok Ha, Woo-Sik Lee,Young-Boo Moon

Journal of Alloys and Compounds, (2020): 155027

Bibtex

Simultaneous determination of defect distributions and energies near InGaN/GaN quantum wells by capacitance–voltage measurement

Tae-Soo Kim, Seung-Young Lim, Gunwoo Jung,Youngboo Moon,Soon-Ku Hong,Jung-Hoon Song

Journal of Physics D, no. 39 (2017)

Cited by1Bibtex

Experimental separation of injection and radiative efficiencies in InGaN/GaN light emitting diodes

Nancho Oh,Taesoo Kim,Youngboo Moon,Junghoon Song

(2015)

Bibtex

Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties

Jeonghwan Jang,Daeyoung Moon,Hyojeong Lee,Donghyun Lee, Daehan Choi,Dukkyu Bae,H Yuh,Youngboo Moon,Yongjo Park,Euijoon Yoon

Journal of Crystal Growth, (2015): 41-45

Cited by13Bibtex

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

N M Sbrockey, T Salagaj, Elane Coleman,G S Tompa,Youngboo Moon,Myung Sik Kim

Journal of Electronic Materials, no. 5 (2014)

Cited by1Bibtex

Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

Byungjun Ahn,Taesoo Kim,Yanqun Dong, Moontaek Hong,Jaeho Song,H Yuh,Sungchul Choi,Dukkyu Bae,Youngboo Moon

Applied Physics Letters, (2012)

Cited by27Bibtex

The role of leaked carriers in reduced LED efficiency

Junghoon Song,Tae Soo Kim,Youngboo Moon,Byungjun Ahn

Spie Newsroom, (2012)

Bibtex

Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination

Taesoo Kim,Byungjun Ahn,Yanqun Dong,Kinam Park,Jingyu Lee,Youngboo Moon,H Yuh,Sungchul Choi,Soonku Hong,Junghoon Song

Applied Physics Letters, (2012)

Cited by22Bibtex

A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate

Geunho Yoo,Hyunsung Park, Hyoungjin Lim, Seunga Lee,Okhyun Nam,Youngboo Moon,Chaerok Lim,Bohyun Kong,Hyungkoun Cho

JAPANESE JOURNAL OF APPLIED PHYSICS, no. 4.0 (2011)

Cited by15Bibtex

LIGHT EMITTING DIODE PACKAGE HAVING LENS

H Yuh,Youngboo Moon,Sungchul Choi

(2011)

Bibtex

Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates

Yanqun Dong,Jaeho Song,Hojong Kim,Taesoo Kim,Byungjun Ahn,Insung Cho, Wontaek Im,Youngboo Moon,Sungmin Hwang,Soonku Hong,Seogwoo Lee

Journal of Applied Physics, (2011)

Cited by5Bibtex

Degradation mechanism of light-emitting diodes on patterned sapphire substrate

Sei-Min Kim,Young-Boo Moon,Il-Kyu Park,Ja-Soon Jang

Physica Status Solidi A-applications and Materials Science, no. 6 (2010): 1414-1417

Cited by1Bibtex

Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

Jae-Ho Song,Yanqun Dong,Ho-Jong Kim,Byung-Jun Ahn,Tae-Soo Kim,Soon-Ku Hong,Hwan-Kuk Yuh,Sung-Chul Choi,Youngboo Moon,Sangkee Shee,Jae-Hak Lee,Jung-Hoon Song

Physica Status Solidi-rapid Research Letters, pp.221-223, (2010)

Cited by5Bibtex

High-breakdown-voltage InGaN/GaN MQW LED Achieved \\by Using aVaried-barrier-growth-temperature Method

Moon Youngboo,Kim Chulmin,Kim Eunhong,Shin Youngchul,Leem Shijong,Lee Byounggyu,Lee Wanho,Kim Taegeun

Journal of the Korean Physical Society, (2009)

Bibtex

High-breakdown-voltage InGaN/GaN MQW LED Achieved \\by Using aVaried-barrier-growth-temperature Method

Leem ShiJong,Shin YoungChul,Kim EunHong,Kim ChulMin,Lee ByoungGyu,Lee WanHo,Kim TaeGeun,Moon Youngboo

Journal of The Korean Physical Society, no. 32 (2009)

Cited by1Bibtex

Effects of Prestrained Layers on Piezoelectric Field and Indium Incorporation in InGaN/GaN Quantum Wells

Jaeho Song,Hojong Kim, Byungjun An,Youngboo Moon, H Yuh,Sungchul Choi

(2009)

Bibtex

Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes

Jaeho Song,Hojong Kim,Byungjun Ahn,Yanqun Dong, Sayong Hong,Youngboo Moon,H Yuh,Sungchul Choi,Sangkee Shee

Applied Physics Letters, (2009)

Cited by23Bibtex

Effects of prestrained layers on piezoelectric field and indium incorporation in InGaN/GaN quantum wells

Hojong Kim, Byungjun An,Junghoon Song,Youngboo Moon,H Yuh,Sungchul Choi

(2009)

Cited by1Bibtex

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

Shi Jong Leem,Young Chul Shin,Kyoung Chan Kim,Eun Hong Kim,Yun Mo Sung,Youngboo Moon,Sung Min Hwang,Tae Geun Kim

Journal of Crystal Growth, no. 1 (2008): 103-106

Cited by14EIBibtex

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Shi Jong Leem,Young Chul Shin,Eun Hong Kim,Chul Min Kim,Byoung Gyu Lee,Youngboo Moon,In Hwan Lee,Tae Geun Kim

Semiconductor Science and Technology, no. 12 (2008)

Cited by28Bibtex

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Papers47 papers

Youngboo Moon