Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes
Microelectronic Engineering（2009）
摘要
Ultra-dense nanometer-scale gratings (20nm pitch) on thin silicon nitride (Si"3N"4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.
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关键词
hsq grating,transmission electron microscopy,scanning transmission electron microscopy (stem),hydrogen silsesquioxane (hsq),pattern quality,ultra-dense nanometer-scale grating,membrane substrate,thin silicon nitride,silicon substrate,thin silicon nitride membrane,electron-beam lithography (ebl),electron energy loss spectroscopy,hydrogen silsesquioxane,ultra-dense hydrogen silsesquioxane,electron beam lithography,scanning transmission electron microscopy
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