Study of radiation damage restoration and antimony ions redistribution in Si(100) and Si(111) crystals

In this work, we study the radiation damage restoration and antimony ions redistribution into 〈100〉 and 〈111〉 oriented silicon substrates. The samples are implanted with antimony to a dose of 5×1014 Sb+cm−2 at 60keV energy, then annealed under oxygen atmosphere at 900°C, 30min. The thin layer of SiO2 (which is formed on Si surface by dry oxidation and expected to prevent any loss of Sb+ dopant during Si recovery) is removed by a 10% HF solution. The specimens are analyzed by H+ Rutherford Backscattering Spectrometry (RBS) operating at 0.3MeV energy in both random and channelling modes.