A well protection layer as a novel pathway to increase indium composition: a route towards green emission from a blue InGaN/GaN multiple quantum well

We have investigated the effects of a well protection layer (WPL) on the optical and crystal properties of an InGaN/GaN multiple quantum well (MQW). The five-pair MQW, consisting of an InGaN well grown at 750 ◦ C and a GaN barrier grown at 850 ◦ C, was simply embedded between GaN cladding layers on a sapphire (0001) substrate. While this ...More