A well protection layer as a novel pathway to increase indium composition: a route towards green emission from a blue InGaN/GaN multiple quantum well

Nanotechnology, Volume 18, Issue 29, 2007.

Cited by: 13|Bibtex|Views0|DOI:https://doi.org/10.1088/0957-4484/18/29/295402
Other Links: academic.microsoft.com

Abstract:

We have investigated the effects of a well protection layer (WPL) on the optical and crystal properties of an InGaN/GaN multiple quantum well (MQW). The five-pair MQW, consisting of an InGaN well grown at 750 ◦ C and a GaN barrier grown at 850 ◦ C, was simply embedded between GaN cladding layers on a sapphire (0001) substrate. While this ...More

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