High performance PIN Ge photodetector and Si optical modulator with MOS junction for photonics-electronics convergence system.

Junichi Fujikata,Masataka Noguchi,Makoto Miura,Masashi Takahashi,Shigeki Takahashi,Tsuyoshi Horikawa,Yutaka Urino,Takahiro Nakamura,Yasuhiko Arakawa

ASP-DAC（2013）

引用 6|浏览5

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摘要

We report on a high speed silicon-waveguideintegrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V center dot cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate.These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system.

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关键词

germanium,optical losses,optical modulation,optical waveguides,p-i-n photodiodes,photodetectors,silicon,Ge,MOS junction,OE/EO devices,Si,bandwidth 45 GHz,drive voltage,high conductivity poly-silicon gate,high speed silicon-waveguide-integrated PIN germanium photodetector,low optical loss,metal-oxide-semiconductor junction,optical interposer,photonics-electronics convergence system,silicon optical modulator

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