The Electron Relaxation And Photoluminescence Decay Of The A-Si-H

Rq Han, Kl Ngai, Xd Guan, J Ruvalds

JOURNAL OF NON-CRYSTALLINE SOLIDS（1987）

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摘要

The photoluminescence (PL) decay data of a-Si :H is analyzed in terms of a modified thermal diffusion with tunneling recombination model. The model is based on the electronic relaxation theory of Ngai.

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