Electroluminescence from silicon nanowires
NANOTECHNOLOGY(2004)
摘要
Room temperature electroluminescence has been demonstrated from undoped silicon nanowires that were grown from disilane. Ensembles of nanowires were excited by capacitively coupling them to an ac electric field. The emission peak occurred at about 600 nm from wires of average diameter of about 4 nm. The emission appears to result from band-to-band electron-hole recombination.
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关键词
electric field,nanowires,electroluminescence,room temperature
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