Three-dimensional silicon integration

IBM Journal of Research and Development, no. 6 (2008): 553-569

Cited by: 147|Views35
EI

Abstract:

Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency, performance enhancements, significant...More

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