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Hysteresis of electronic transport in graphene transistors.

ACS nano, no. 12 (2010): 7221-7228

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Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a posit...更多

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