Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs
Electron Device Letters, IEEE（1993）
摘要
Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.<>
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关键词
ion implantation,semiconductor device models,surface potential,annealing,semiconductor,2d simulation,subquarter micrometer nmosfet,900 to 1000 c,insulated gate field effect transistors,short-channel effects,rapid thermal annealing,drain-induced barrier lowering,digital simulation,as,si:b,rapid thermal processing,b redistribution,as implantation damage,as activation annealing,segregation,drain implant induced degradation,boron,short channel effect,drain induced barrier lowering,degradation,arsenic
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