Surface and Electrical Properties of Inductively-coupled\\Plasma-etched N-face n-GaN and a Method of Reducing the Ohmic\\Contact Resistance of Plasma-damaged N-face n-GaN
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 1140-1144, 2009.
An investigation of the surface and the electrical properties of inductively-coupled plasma (ICP)-etched N-face n-GaN is reported. Furthermore, a method for reducing the Ohmic contact resistance on plasma-damaged N-face n-GaN is proposed. The I - V characteristics show that the Cl-2 flow rate used for the ICP etching has a strong influenc...More
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