Novel single-poly EEPROM with damascene control-gate structure

Hung-Cheng Sung,Tan Fu Lei,Te-Hsun Hsu,S. W. Wang,Ya-Chen Kao,Yung-Tao Lin,Chung S. Wang

IEEE Electron Device Letters（2005）

引用 14|浏览31

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摘要

A novel single-poly EEPROM using damascene control gate (CG) structure is presented in this letter. The CG is tungsten (W) line made by a damascene process, and intergate dielectric is Al/sub 2/O/sub 3/ grown by atomic layer deposition (ALD). The program and erase mechanism is the same as the one for traditional stacked-gate cell, which uses the channel hot electron injection for programming and F...

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关键词

EPROM,Character generation,Voltage,Tungsten,Atomic layer deposition,Channel hot electron injection,Tunneling,High-K gate dielectrics,CMOS process,Inorganic materials

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