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RBS/NRA/channeling analysis of implanted immiscible species

H Naramoto, S Yamamoto,K Narumi

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS(2000)

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摘要
Ion implantation of immiscible elements was performed to prepare supersaturated substance for further heat treatment. Cu-63 ion implantation was made at low temperature into Nb(1 0 0), (1 1 0) and (1 1 1) single crystal films on sapphire, and the induced lattice damage and the lattice location of implanted Cu atoms were analyzed by 2.7 MeV He-4(+) RBS/channeling. The coherent segregation of Cu-63 atoms with specific crystallographic orientations was found in the near surface region (Cu(1 0 0)/Nb(1 0 0), Cu(1 1 1)/Nb(1 1 0) and Cu(1 1 0)/Nb(1 1 1)). The same kind of study was also made in Ir(1 0 0)/MgO(1 0 0) implanted with 50 keV C-12(+) ions. In addition to 2 MeV He-4(+) RBS/channeling, 1.22 MeV d(+) RBS/NRA/channeling was employed to detect implanted C-12 atoms. The results suggest that C-12 atoms are aligned along Ir(1 0 0) direction at least by low temperature implantation followed by thermal annealing. (C) 2000 Elsevier Science B.V. All rights reserved.
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关键词
niobium,copper,iridium,carbon,RBS,NRA,channeling
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