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Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, no. 2 (2010)
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Abstract
This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization, and vacuum gap width on the spectral and total radiative transfer are studi...More
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