Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, pp. 2096-2100, 2007.

Cited by: 1|Views1

Abstract:

The double-gate (DG) metal oxide semiconductor field-effect transistor (MOSFET) is considered to be a promising for the next-generation device. We have developed a model describing the short-channel effects of the DG-MOS ET. The model describes suppression of the short-channel effect with the reduction of the silicon layer thickness. Mode...More

Code:

Data:

Get fulltext within 24h
Bibtex
Your rating :
0

 

Tags
Comments