Decay Lengths For Diffusive Transport Activated By Andreev Reflections In Al/N-Gaas/Al Superconductor-Semiconductor-Superconductor Junctions
PHYSICAL REVIEW LETTERS(1997)
摘要
In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.
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关键词
andreev reflection,energy gap,energy conservation,superconductors
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