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Physical Model For Trap-Assisted Inelastic Tunneling In Metal-Oxide-Semiconductor Structures

JOURNAL OF APPLIED PHYSICS, no. 7 (2001): 3396-3404

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A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang-Rhys f...更多

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