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2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

J. Comput. Physics, no. 1 (2006): 55-80

Cited: 57|Views23

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monte carlo resultboundary conditiondirect simulationweighted essentially non-oscillatory schemessemiconductor device simulationMore(25+)

Abstract

We develop and demonstrate the capability of a high-order accurate finite difference weighted essentially non-oscillatory (WENO) solver for the direct numerical simulation of transients for a two space dimensional Boltzmann transport equation (BTE) coupled with the Poisson equation modelling semiconductor devices such as the MESFET and MO...More

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