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Large Melting-Point Hysteresis Of Ge Nanocrystals Embedded In Sio2

PHYSICAL REVIEW LETTERS, no. 15 (2006): 155701-155701

Cited by: 74|Views14
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Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/- 17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

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