Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

F. Villard,J.-P. Prigent,E. Morvan,C. Dua,C. Brylinski,F. Temcamani,P. Pouvil

IEEE Transactions on Microwave Theory and Techniques（2003）

引用 33|浏览5

暂无评分

摘要

In this paper, we present recent results on an SiC MESFET and we describe two of the main limitation mechanisms encountered: the self-heating and the trapping effects. Results on recent MESFET devices processed by THALES Research and Technology (TRT), Colombes, France, show that the trapping effects has been solved by using epitaxial layers on a higher purity 4H-SiC semi-insulating substrate sample made with a new technique by Okmetic, Vantaa, Finland. The association of two chips in the same case showed that the main limitation mechanism for power density originates from self-heating effects, which could be solved by optimizing the chip layout. 37.8-W output power at 500 MHz, 1.78-W/mm power density, and 35-dB third-order intermodulation-distortion ratio are the best obtained performances. An experimental analysis of trapping and self-heating effects on large-periphery SiC MESFETs is proposed in this paper.

查看译文

关键词

intermodulation distortion,microwave field effect transistors,microwave power transistors,power MESFET,semiconductor epitaxial layers,silicon compounds,wide band gap semiconductors,37.8 W,4H-SiC semi-insulating substrate,500 MHz,RF power,SiC,epitaxial layer,large-periphery SiC MESFET,microwave power,output power,power density,self-heating effect,thermal effects,third-order intermodulation distortion ratio,trapping effect,wide band gap material

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要