Structural characterisation of zinc-blende Ga1−xMnxN epilayers grown by MBE as a function of Ga flux
Journal of Crystal Growth(2005)
摘要
Zinc-blende Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy as a function of Ga flux are assessed using a variety of structural characterisation techniques. The Ga:N ratio was found to have a dominant impact on the zinc-blende Ga1−xMnxN epilayer growth rate and resultant composition, morphology and microstructure. A maximum growth rate and an improved microstructure are associated with growth under slightly Ga-rich conditions. A reduced growth rate and enhanced Mn incorporation are associated with growth under slightly N-rich conditions. α-MnAs inclusions and voids extending into the GaAs buffer layer were observed in all cases, however they are considered not to affect the layer electrical and magnetic properties.
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关键词
A1. Characterisation,A3. Molecular beam epitaxy,B1. Nitrides,B2. Semiconducting III–V materials
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