Quality And Uniformity Assessment Of Algan/Gan Quantum Wells And Hemt Heterostructures Grown By Molecular Beam Epitaxy With Ammonia Source

In the present work, AlGaN/GaN quantum wells and High Electron Mobility Transistors (HEMTs) have been grown by molecular beam epitaxy on Si(111) and GaN on sapphire templates. The optical quality and the electrical properties were studied by low temperature photoluminescence and Hall effect. These measurements attest the quality of these heterostructures and demonstrate the high on-wafer uniformity of the materials grown on 50 mm wafers, and this even for the III-nitrides grown on Silicon. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.